以非真空製程製備銅銦二硫(CuInS2)薄膜光伏材料之特性研究

Preparation and Characterization of CuInS2 thin film Photovoltaic materials by non-vacuum processes

陳靜怡(Ching-I Chen)

指導教授 ： 楊立中

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所在職專班/碩士(2010年)

https://doi.org/10.6827/NFU.2010.00104

摘要

薄膜太陽能電池中，銅銦鎵硒(CIGS)為目前最熱門的材料，在Mo/CIGS/CdS/ZnO 電池結構中，嘗試使用銅銦二硫(CuInS2)薄膜代替CIGS做為吸收層，研發出不同材料，使材料具多元化選擇。
在製備過程中，使用球磨法(Ball Milling)製備成前驅物(precursor)漿料，再將CuInS2漿料塗佈於玻璃基板上製成薄膜的方法，所用的前驅物包括CuS 與In2S3，針對這兩種前驅物的成分可以獨立調整其比例，以獲得不同的Cu/In 比。再置於RTA爐管內進行快速退火製程，利用溫度(400-700℃)的變化使其形成黃銅礦(Chalcopyrite)結構之薄膜，利用此非真空製程製備吸收層，可以降低不少成本。
本實驗所製備出來的前驅層CuInS2薄膜，從Cu/In比將薄膜分為Cu-rich與Cu-poor兩種類型；所生長的CuInS2 薄膜以X 光繞射法(X-ray Diffraction, XRD)加以分析，結果顯示晶體結構為黃銅礦(Chalcopyrite)結構。
在本論文中，我們發展了新的方法製備CuInS2薄膜，由本實驗之結果可得到，熱處理時間不需太長，且不作硒化反應下，於加熱溫度650℃、持溫10分鐘即可得到具有較佳黃銅礦特性之CuInS2薄膜。因此，對於製作CuInS2薄膜太陽能電池及相關的元件，均可使用球磨及塗佈方法，開發此製程技術，主要是以降低製程成本，達到增進元件產量、品質與效能的目的。

關鍵字

銅銦二硫 ； 黃銅礦

並列摘要

Among thin film solar cells, Cu(InxGa1-x)Se2 recently become the most popular photovoltaic material, whose device structure is ZnO/CdS/CIGS/Mo/glass. In this study, CuInS2 was formed as an alternative material of Cu(InxGa1-x)Se2 in order to provide a diversity of viewpoints on materials selection policy.
Under the process, A printable CuInS2 paste prepared by ball milling is deposited on a glass substrate to form a precursor layer. The raw materials include CuS and In2S3 powders. The Cu/In ratio of thin film can be varied by adjusting the amount of both two powders. The precursor layer was placed in RTA furnace, and then heated at the temperature between 400℃ and 700℃ to form the compound layer. Compared to traditional vacuum-based deposition processes, Non-vacuum processing is capable of reducing the cost of manufacturing significantly.
The prepared precursor samples can be classified to two types: Cu-rich and Cu-poor samples based on the Cu-In ratio. Microstructural studies are carried out using a X-ray diffractometer. The analysis result shows that these samples have chalcopyrite structure.
We have developed a novel technique for fabricating CuInS2 thin film without long heat treatment and selenization. CuInS2 thin film with chalcopyrite structure can be obtained by heating at 600℃ for 10 minutes. Therefore, ball milling and printing can be used for making CuInS2 thin film solar cells and related devices. The goal of study is to provide a technique that can be scaled up easily to production of large areas and to commercial quantities.

並列關鍵字

CuInS2 ； Chalcopyrite

參考文獻

1. J. L. Shay and J. H. Wernick, “Ternary Chalcopyrite Semiconductor: Growth, Electronic Properities, and Applications”, Pergamon Press, New York, (1975)

2. 劉博文,「半導體元件物理」, Chapter 11, 高立, 民國95年2月

3. 黃瑜， “CIGS太陽電池技術與展望”， 工研院產業學院, 民國96 年8 月16 日

4. S. Zweigart, D. Schmid, J. Kessler, H. Dittrich and H. W. Schock, “Studies of the growth-mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, 146, pp. 233-238 (1995)

5. A. Rockett, et al., “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, 59, pp. 255-264, (1999)