本實驗是研究銅銦鋁硒(CuIn1-xAlxSe2,CIAS)薄膜在太陽能電池吸收層材料之應用。首先利用球磨法製備銅銦鋁硒化合物漿料,並以塗佈法將CIAS漿料塗佈於基板上形成CIAS前驅層(precursor),再置於RTP爐管內進行高溫快速退火製程,使CIAS前驅層形成具黃銅礦(Chalcopyrite)結構特性之薄膜;化合物漿料是由CuSe、In2Se3、Al2Se3等三種合金化合物混合所形成,藉由調整三種化合物比例,使RTP快速退火製程中,能在不通入硒蒸氣或硒化氫等氣體下,利用高溫擴散得到具備黃銅礦結構之CIAS薄膜。 從文獻中可以發現,CuIn1-xAlxSe2薄膜會隨著x的增加,提高其能隙以增加光的吸收範圍。在本實驗中製備x = 0.1、x = 0.2、x = 0.3等三種不同比例之CuIn1-xAlxSe2化合物薄膜;由X光繞射分析結果顯示,CIAS薄膜之晶體結構為黃銅礦結構,隨著熱處理溫度的升高,晶粒尺寸會隨之成長變大,且其(112)之特徵峰會隨著x增加向高角度(2θ)位移。 由本實驗結果得知,CuIn1-xAlxSe2前驅層所需之熱處理時間不需太長,且可在不通入硒蒸氣或硒化氫等氣體下,於熱處理溫400℃、持溫10分鐘,即可得到具有(112)特徵面的黃銅礦結構之CIAS薄膜。
The study is focused on the application of CuIn1-xAlxSe2 for solar cell absorber layer. The nanoparticle ink is preparing using wet ball milling, and then the ink is deposited on a substrate to form a precursor layer. The precursor is heated to become semiconductor layer with chalcopyrite structure. The ink consists of three compound powders, such as CuSe, In2Se3, and Al2Se3. By adjusting the ratio of different powders, we can obtain the CIAS thin film by rapid thermal process in absence of Se or H2Se atmosphere. According to some related literatures, with x increasing, CuIn1-xAlxSe2 has larger energy gap to form the optimized the spectral absorption profile. We prepared three thin film with x=0.1, x=0.2, and x=0.3, respectively. The samples, characterized by X-ray diffract meter, has chalcopyrite structures. We found that as temperature increasing, the grain size will grow, and (112) peak in X-ray diffraction pattern will shift to higher angle. The research result dedicate that the CuIn1-xAlxSe2 precursor layer will transform into Chalcopyrite structure through a short hot treatment. Chalcopyrite structure can be achieved by heating at 400C for 10 minutes without Se or H2Se atmosphere.