- 學位論文
設計於K-Band及X/Ku-Band之低雜訊放大器
Design of the Low Noise Amplifiers using in K-Band and X/Ku-Band
摘要
本論文主要研究K-Band及X/Ku-Band之低雜訊放大器(Low Noise Amplifier, LNA)。電路採用穩懋半導體公司(WIN Semiconductors Corp) 0.15um pHEMT製程。論文中分別使用回授網路、電流再利用、疊接式與串接式電路架構來設計兩個不同頻段的放大器，並且對其模擬與量測結果進行分析與比較。 第一部分K-Band低雜訊放大器可應用於汽車防撞雷達系統(24GHz)、固定/流動式雷達測速照相系統(24.125GHz)，在設計上採用LC匹配與串接式架構。LC匹配在射頻電路中是用來匹配輸入端與輸出端之阻抗，串接式架構則可以用來增加放大器的增益。此低雜訊放大器電源供應為1.6V與0.2V，功率消耗為344mW，所量測到的數據如下，增益為11.63~5.21dB，雜訊指數為7.59~10.59dB，輸入反射損耗為-22.22~-17.43dB，輸出反射損耗為-9.34~-5.75dB，而反向隔離度為-34.81~-27.67dB。 第二部分為X/Ku-Band低雜訊放大器，X-Band部分可應用於民生用途、與軍事用途，Ku-Band部分則可應用於衛星通訊。所採用的設計架構為回授網路、電流再利用與疊接式架構。回授網路可以提供良好的輸入阻抗，使整體穩定度增加，電流再利用可以提高增益，且降低功率消耗。此低雜訊放大器電源供應為1.2V與2.5V，功率消耗為258mW，所模擬增益為14.16~10.40dB，雜訊指數為2.66~3.74dB，輸入反射損耗為-31.55~-11.67dB，輸出反射損耗為-30.13~12.55dB，而反向隔離度為-40.55~-26.17dB。
並列摘要
In this thesis, this research focused on the designs of the Low Noise Amplifiers (LNAs) on K-Band and X/Ku-Band. The structures of resistance feedback, current reused, cascade and cascode architectures were used for the circuit designs. The WIN Semiconductors 0.15um pHEMT process was adopted. The measured results are compared with the simulation on the design frequency ranges. For the first part, the applications for the LNA of K-Band include the collision avoidance radar system (24GHz) and the fixed/mobile radar speed camera system (24.125GHz). The circuit design adopted the LC matching and cascade architectures. The LC matching architecture was used to match input and output impedance. The cascade architecture can improve the gain of the circuit. A voltage source of 1.6V and 0.2V are applied with power consumption 344mW. The measurement showed the results of gain 11.63~5.21dB, noise figure 7.59~10.59dB, input return loss -22.22~-17.43dB, output return loss -9.34~-5.75dB, and isolation -34.81~-27.67dB. The other LNA was designed on X/Ku-Band. Circuits designed on X-Band can be applied for general and military use. For Ku-Band, it can be exercised to satellite communications. The resistance feedback and current reused architectures were adopted. The resistance feedback structure can provide a better input impedance by the resistance feedback architecture and increase the overall stable factor. In addition, the current reused architecture is employed to achieve a high gain, and decrease the power consumption. The voltage sources of low noise amplifier are 1.2V and 2.5V. The power consumption is 258mW. This low noise amplifier achieves the following simulation results of gain 14.16~10.40dB, noise figure 2.66~3.74dB, input return loss -31.55~-11.67dB, output return loss -30.13~-12.55dB, and isolation -40.55~-26.17dB.