65nm窄寬度MOSFETs於升溫下之通道熱載子可靠度探討

Channel-Hot-Carrier Effect on 65 nm Wide/Narrow Width MOSFETs with Temperature Variations

蔡國裕(Kuo-Yu Tsai)

指導教授 ： 謝振楡

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2012年)

https://doi.org/10.6827/NFU.2012.00022

摘要

長久以來，通道熱載子(channel-hot-carrier, CHC)效應一直是金氧半場效電晶體(metal-oxide-semiconductor field-effect transistors, MOSFET)主要的可靠度研究課題，隨著元件尺寸不斷的微縮，介電層的電場也越來越大，使得MOSFET的可靠度明顯下降。有關通道熱載子可靠度的議題雖已有不少研究，但在窄寬度MOSFET的可靠度研究上卻相對的較少。
在本研究中，採用65 nm製程的元件，通道長度為0.06 μm，寬度分別為10 μm及1 μm，閘級氧化層厚度為19 A之SiON的MOSFET作為實驗的樣本，進行通道熱載子的加壓實驗。所有的測試分別以25、85及125 ℃三個溫度進行，並觀察不同的通道寬度對通道熱載子可靠度的影響。經實驗後發現，不論是nMOSFET或pMOSFET，在高溫及較大的通道熱載子應力電壓下，MOSFET的劣化較為嚴重。而且當寬度縮減，元件的劣化將會更加嚴重。

關鍵詞：通道熱載子、金氧半場效電晶體、寬度、溫度、劣化。

關鍵字

寬度 ； 溫度 ； 通道熱載子 ； 金氧半場效電晶體 ； 劣化

並列摘要

For a long time, channel hot carrier (CHC) effect is a major reliability issue of metal-oxide-semiconductor field-effect transistors (MOSFET). Due to the MOSFET dimension reduction in a limited and the oxide field increases quickly. This leads to apparently decrease of MOSFET reliability. Although there are many issues related to channel hot carrier reliability research, but in the reliability study of the narrow width MOSFET is relatively less.
In this study, the devices being tested are fabricated by 65 nm process. Their channel length is 0.06 μm, channel width is 10 μm and 1 μm, gate insulator is SiON of 19.5 A. For the CHC stress conditions, all tests were conducted at temperatures of 25, 85 and 125 ℃, and observe channel hot carrier effect for different channel width. From the experimental results, no matter is nMOSFET or pMOSFET, the CHC stress with the maximal stress voltage and the highest temperature causes the most severe MOSFET degradation. And the channel width scaling down, the degradation of MOSFET will be more serious.

並列關鍵字

Width ； Channel-Hot-Carrier ； MOSFET ； Temperature ； Degradation

參考文獻

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