以電漿增強化學氣相沉積法製備氮氧化矽氣體阻障層之研究

A Study on the Preparation of Silicon Oxynitride Gas Barrier by Using Plasma Enhanced Chemical Vapor Deposition

林益銓(Yi-Cyuan Lin)

指導教授 ： 劉代山

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2013年)

摘要

本研究以四甲基矽烷、氨氣與氧氣等混合氣體為源氣體，並利用電漿增強化學氣相沉積系統在可撓式塑膠基板上製備出高阻氣能力之氮氧化矽薄膜，研究中詳細探討不同製程條件下之氮氧化矽薄膜的水氣滲透率與薄膜化學特性，建立具有最佳阻氣能力氮氧化矽薄膜製程條件。研究結果顯示，藉由氨氣的摻雜於氧化矽薄膜內的確能有效地提高氣體阻障層之阻障能力，當四甲基矽烷、氨氣與氧氣流量比例為1:1:1，且基板升溫至120℃時，能夠使的薄膜水氣滲透率(Water Vapor Transmission Rate)下降至0.06 g/m2/day，且獲得最大之阻障改善因子（BIF），其有效滲透率（Effective permeability）可下降至 0.006 μm-g/m2/day且藉由百格附著度測試薄膜可以得知，其薄膜附著度在PET塑膠基板上達到5B等級，而薄膜殘留壓應力可從無機氧化矽薄膜450MPa下降至123Mpa，另一方面，氮氧化矽薄膜在不同製程溫度下研究結果顯示，當製程溫度提高時可以有效降低薄膜中氮/碳原子濃度相對比值，有助於減少薄膜表面突起物的形成，進而提高薄膜緻密性，而在低溫(<70oC)環境下進行三對有機/無機多層氣體阻障層結構其水氣滲透率可到達商用MOCON水氣滲透率機台的量測極限(<0.01 g/m2/day)，最後將此低溫(＜70oC)環境下製作之優異氣體阻障能力的氮氧化矽薄膜，應用在有機發光二極體的薄膜封裝製程中，結果顯示，有機發光二極體元件的電流-電壓-亮度並不會受到此製程溫度的影響，且操作壽命也能提升4倍以上。

關鍵字

電漿增強化學氣相沉積法 ； 氮氧化矽 ； 氣體阻障層 ； 電漿增強化學氣相沉積法 ； 氮氧化矽 ； 氣體阻障層 ； 水氣滲透率

並列摘要

In this study, tetramethyl silane, ammonia and oxygen mixed gas as a source gas, and using plasma enhanced chemical vapor deposition system in the flexible plastic substrate prepared by high gas capacity of silicon oxynitride films, study discussed in detail under various process conditions silicon oxynitride film of water vapor permeability and chemical properties of the film, the establishment has the best gas barrier ability silicon oxynitride film process conditions. The results show that, with ammonia doped silicon oxide film is indeed effective in improving the gas barrier layer barrier capability, when tetramethylsilane, ammonia and oxygen flow ratio of 1:1:1, and the when the substrate temperature was raised to 120 ℃, enabling film water vapor transmission rate fell to 0.06 g/m2/day, and get the most out of the barrier improvement factor (BIF), the effective permeability can be reduced to 0.006 μm-g/m2/day and tape-peeling test can see that the degree of its silicon oxynitride film attached to the substrate reaches 5B level, and the film residual stress can be dropped from the inorganic oxide films 450MPa to 123Mpa, on the other hand, silicon oxynitride films at different process temperatures results show that when the process temperature is increased film can effectively reduce the nitrogen / carbon atomic concentration relative ratio helps reduce the formation of the film surface protrusion, thereby improving film density, and in the low temperature (<70oC) environment for three pairs of organic / inorganic gas barrier multi-layer structure of the water vapor permeability to reach commercial machines MOCON measurement limit (<0.01 g/m2/day), last this low temperature (<70oC) environment produced excellent gas barrier ability of the silicon oxynitride film, used in organic light-emitting diodes film packaging process, the results show that the organic light emitting diode device current - voltage - luminance is not affected by this process temperature, and can also enhance the operating life of more than 4 times.

並列關鍵字

plasma-enhanced chemical vapor deposition ； silicon oxynitride ； gas barrier layer ； WVTR

參考文獻

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