在可撓式塑膠基板上沉積透明導電薄膜之機械撓曲特性研究

Flexibility Properties of A Transparent Conductive Film Deposited on The Plastic Substrate

王俊杰(Jyun-Jie Wang)

指導教授 ： 劉代山

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2013年)

摘要

本研究利用射頻磁控共濺鍍系統(RF magnetron co-sputtering system)，在可撓式塑膠基板上沉積氧化銦錫、氧化銦錫-氧化鋅以及鋁-氧化鋅共濺鍍透明導電薄膜，並加入適當厚度的緩衝層結構，製備出具有低電阻率、低應力與優異附著度之薄膜，利用彎曲測試儀器探討其薄膜於不同撓曲曲率及彎曲次數後的撓曲可靠度特性。研究結果顯示，當厚度為150nm之氧化銦錫薄膜於張/壓應變撓曲條件下，其臨界撓曲曲率分別為14.1/5.4mm，藉由觀察薄膜表面形貌，可以發現，薄膜可以承受較大的壓應變外力，且裂紋的形成進而影響到臨界破裂曲率，並經過多次撓曲測試(撓曲曲率半徑大於臨界撓曲曲率)後，氧化銦錫薄膜之電阻值仍無顯著變化，其附著度可達到4B標準。接著，於氧化銦錫薄膜以及塑膠基板間沉積有機矽基薄膜當作一介面緩衝層，當有機矽基薄膜厚度為60nm時，薄膜殘留應力則大幅下降至 -170 MPa，使有機矽基薄膜與氧化銦錫薄膜之間，達到張/壓應力薄膜交錯堆疊，讓薄膜整體壓應力大幅下降，進而改善其附著度，均可達到4B標準。最後，分別將氧化銦錫、氧化銦錫-氧化鋅以及鋁-氧化鋅共濺鍍透明導電薄膜進行X光繞射分析，可以發現，氧化銦錫-氧化鋅薄膜為非晶(Amorphous)結構，而氧化銦錫、鋁-氧化鋅薄膜為多晶(Poly-crystalline)結構，非晶結構的薄膜晶粒不容易受到外力而產生裂紋，證實氧化銦錫-氧化鋅薄膜的機械可靠性較優於鋁-氧化鋅與氧化銦錫薄膜。

關鍵字

射頻磁控共濺鍍系統 ； 氧化銦錫 ； 氧化銦錫-氧化鋅 ； 鋁-氧化鋅 ； 有機矽基 ； 殘留應力 ； 撓曲可靠度

並列摘要

In this study, Indium Tin Oxide(ITO), Indium Tin Oxide-doped Zinc Oxide(ITO-ZnO) and Aluminum-doped Zinc Oxide(Al-ZnO) transparent conductive films prepared using RF magnetron co-sputtering system deposited onto the flexible plastic substrate and add the appropriate thickness of the buffer layer, an purpose to prepared with a low resistivity, low stress and superior adhesion of the film, using bending test instruments to explore reliability characteristics of film after different curvature and bending frequency. Firstly, thickness of 150nm Indium Tin Oxide film with tensile/compressive strain bending conditions, the critical curvature were 14.1/5.4mm, observe the surface morphologies, the film can endure great compressive strain by external force, the formation of cracks effect the critical crack curvature, after cycle bending test (bending radius of curvature greater than the critical crack curvature), resistance of Indium Tin Oxide film still have no significant change and adhesion can reach the standard value of 4B. Second, deposited organicsilicon film as a buffer layer between Indium Tin Oxide film and plastic substrate at the interface when the organic silicon film thickness of 60nm, the film of residual stress is reduced to -170 MPa, organic silicon and Indium Tin Oxide films structure to reach tensile / compressive stress interleaved stacks, the overall of film compressive stress substantial decline and effectively improve adhesion reach the standard value of 4B. Finally, Indium Tin Oxide, Indium Tin Oxide-doped Zinc Oxide and Aluminum-doped Zinc Oxide of transparent conductive films were analysis by X-ray Diffraction, we can found Indium Tin Oxide-doped Zinc Oxide film is an amorphous structure, but Indium Tin Oxide and Aluminum-doped Zinc Oxide films are poly-crystalline structure, amorphous structure do not have any grains and the external force is not easy for cracks to form, Therefore, Indium Tin Oxide-doped Zinc Oxide film has good bending reliability than Aluminum-doped Zinc Oxide and Indium Tin Oxide films.

並列關鍵字

RF magnetron co-sputtering system ； Indium Tin Oxide ； Indium Tin Oxide-doped Zinc Oxide ； Aluminum-doped Zinc Oxide ； organic silicon ； residual stress ； bending reliability

參考文獻

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