- 學位論文
以射頻共濺鍍系統於室溫下沉積透明導電膜之研究
A transparent conductive oxide films prepared by RF cosputtering system at room temperature
摘要
本研究開始首先藉由氧化銦錫與氧化鋅多層結構的方式，改善氧化銦錫透明導電膜之導電特性，由研究結果顯示，利用氧化銦錫薄膜與氧化鋅薄膜所備製多層結構之透明導電膜，在電特性上與單純氧化銦錫薄膜(導電率為1.96×10-3 Ω-cm)相比較，電阻率可獲得些許提升(約1.55×10-3 Ω-cm)，因此，依據此實驗結果，提出以射頻共濺鍍方式，同時對氧化銦錫與氧化鋅兩種材料以共濺鍍之方式在室溫下製備高導電性之透明導電膜，預期在室溫下能有效改善氧化銦錫透明導電膜之導電特性，使透明導電膜在有機發光元件上能有更好的表現。 研發結果顯示，在室溫下沉積透明導電膜，以氧化鋅與氧化銦錫為靶材，採共濺鍍之方式所沉積之最佳透明導電膜，導電率為3×10-4 Ω-㎝，與單純的氧化銦錫薄膜(導電率為1.96×10-3 Ω-cm)相較，其導電特性獲得大幅改善，且以共濺鍍方式備製之透明導電膜，經由XRD的觀察顯示，在適當條件下所沉積之透明導電膜為非晶結構，表面粗糙度(Ra~1.18 nm)較單純氧化銦錫薄膜(Ra~2.89 nm)的多晶結構平整，且在可見光之平均穿透率均大於 80%。
關鍵字
non並列摘要
Improvement electrical properties of transparent and conductive by way of indium tin oxide and zinc oxide multilayer structure had been investigated. Shown by the result of study, utilize indium tin oxide films and zinc oxide films prepared by transparent and conductive of multilayer structure, the resistivity obtained improved (about 1.55×10-3 Ω-cm) with indium tin oxide films (about 1.96×10-3 Ω-cm) to compare. Therefore, by the experimental result propose it by way of ratio frequency cosputtered mold, at the same time to indium tin oxide and zinc oxide two kinds of materials prepared high electrical properties transparent conductive films by cosputtered system at room temperature. The transparent electrode obtained from co-sputtering system with ITO and ZnO targets had been investigated. The resistivity was significant improved with an additional co-sputtered ZnO target compared to the individual ITO film. A lowest resistivity transparent film of 3×10-4 Ω-cm was achieved at room temperature as the rf power of co-sputtering system. The transparent conductive films prepared by cosputtered. Show via observation of XRD, the transparent conductive films was amorphous at the optimum condition. The surface roughness of these co-sputtered films (1.18 nm) was also superior to individual ITO films (about 2.89 nm). The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.