鎳/氧化銦錫金屬電極與氮化鋁-氧化鋅共濺鍍薄膜歐姆接觸及其應用於發光二極體之研究

Investigations on The Ni/ITO Metal Electrode Ohmic Contacts to AlN-ZnO Cosputtered Films and Its Applications to Light-Emitting Diode

洪榛棟(Jhen-Dong Hong)

指導教授 ： 劉代山

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2011年)

摘要

本研究於室溫下利用射頻磁控式共濺鍍系統，以氧化鋅以及氮化鋁為共濺鍍靶材，在矽基板上分別沉積鋁原子摻雜濃度之理論值為10%的氮化鋁-氧化鋅共濺鍍薄膜與未摻雜氧化鋅薄膜，並分別在氮氣與氧氣環境下進行後續熱處理製程，藉以活化摻雜在薄膜中的受體離子，製作p型氮化鋁-氧化鋅共濺鍍薄膜與未摻雜氧化鋅薄膜。分別控制電子與電洞濃度至1015 ~ 1016 cm-3及1017 ~ 1018 cm-3，接著分別於薄膜上製作傳輸線模型，藉由半導體參數分析儀、歐傑電子能譜儀之縱深分佈、可見光-紫外光光譜儀量測熱退火前後歐姆接觸特性變化及機制。研究結果顯示，鎳/金、鎳/氧化銦錫金屬與氮化鋁-氧化鋅共濺鍍薄膜以及共濺鍍透明電極與未摻雜氧化鋅薄膜分別具有歐姆接觸電阻率為3.54×10−5 Ωcm2、8.23 × 10−6 Ωcm2以及2.87×10-6 Ωcm2，在穿透率方面，鎳/氧化銦錫金屬與氮化鋁-氧化鋅共濺鍍薄膜接觸於熱退火後其平均可見光穿透特性明顯優於鎳/金金屬與氮化鋁-氧化鋅共濺鍍薄膜熱退火後之可見光平均穿透率。最後，分別以共濺鍍透明導電膜（Zn/(Zn+In) = 33 at.%）與鎳/氧化銦錫金屬做為n型與p型歐姆接觸電極，於矽基板上製作p-ZnO/n-ZnO同質接面之發光二極體，以半導體參數分析儀及螢光光譜儀量測發光二極體之電流-電壓特性與電激發放射光譜，結果顯示，由發光二極體之電流-電壓特性可得知，此p型氧化鋅/n型氧化鋅同質接面發光二極體之啟動電壓約為1.4V，且呈現出傳統p型氧化鋅/ n型氧化鋅同質接面發光二極體元件整流特性。

關鍵字

射頻磁控式共濺鍍系統 ； 氮化鋁-氧化鋅共濺鍍薄膜 ； 同質接面發光二極體

並列摘要

In this study a undoped zinc oxide and AlN codoped zinc oxide thin films was deposited onto a si substrate at room temperature by using an RF magnetron cosputtering system using AlN and ZnO targets. The O2 and N2 thermal treatment process changed the concentration of electrons and holes to 1015 ~ 1016 cm-3 and 1017 ~ 1018 cm-3. The thin film was then established with a transmission line model, and the changes and mechanisms of the ohmic contacts before and after thermal annealing were measured by a semiconductor parameter analyzer, Auger electron spectroscopy (AES) and visible light-UV spectrometer. Research results showed that the Ni/Au、Ni/ITO metal electrode contacts to p-type zinc oxide and co-sputtering transparent electrode contacts to n-type zinc oxide thin film respectively possessed ohmic-contact electrical resistivity of 3.54 × 10−5 Ωcm2 、8.23 × 10−6 Ωcm2 and 2.87×10-6 Ωcm2. In the aspects of transparency, once the Ni/ITO electrode and p-type zinc oxide thin film went through thermal annealing, the average visible light transparent characteristics were significantly better than the average transparency of Ni/Au electrode and p-type zinc oxide thin film that also went through thermal annealing. At the end of this study, using the co-sputtering transparent electrode of ITO-ZnO and Ni/ITO as the ohmic-contact electrodes of the n-type zinc oxide and p-type zinc oxide were applied to produce a p-ZnO/n-ZnO homo-junction LED on the si substrate. The semiconductor parameter analyzer and fluorescence spectroscopy measurements of light-emitting diode current-voltage characteristics and electrical excitation emission spectroscopy, showed that, by the current-voltage characteristics can be learned, this p-type ZnO/n-type ZnO homo-junction light-emitting diodes turn-on voltage of about 1.4V; and showing a conventional p-type ZnO/n-type ZnO homo-junction light-emitting diode rectifier characteristic.

並列關鍵字

RF magnetron cosputtering system ； AlN codoped zinc oxide thin films ； homojunction light-emitting diode

參考文獻

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[4] C. Wang, et al., 2006, “Fabrication and characteristics of the low-resistive p-type ZnO thin films by DC reactive magnetron sputtering”, Materials Letters, 60, p 912.

[5] M. L. Tu, et al., 2006, “Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering”, Journal of Applied Physics, 100, p 053705.