利用氮化鋁-氧化鋅共濺鍍薄膜應用於雙異質接面發光二極體

Investigation on AlN-ZnO Cosputtered Films for ZnO Double Heterojunction Light-Emitting Diode Application

何家丞(Chia-Cheng Ho)

指導教授 ： 劉代山

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2013年)

摘要

本研究利用射頻磁控共濺鍍系統，分別使用氧化鋅、氮化鋁靶材製作出未摻雜氧化
鋅薄膜與摻雜比例不同的氮化鋁-氧化鋅共濺鍍薄膜，後續進行真空環境700℃熱處理改善其薄膜結晶性與光電特性，利用未摻雜氧化鋅薄膜與摻雜比例不同的氮化鋁-氧化鋅共濺鍍薄膜製作出不同異質結構，分別為n-ZnO、AlN -ZnO(40%)/ZnO/
AlN-ZnO (20%)與AlN-ZnO (40%)/ZnO/AlN-ZnO (40%)等三種結構，藉由室溫光激發螢光光譜量測探討其三種結構之氧化鋅 NBE 強度，發現AlN-ZnO 40%/ZnO/AlN-ZnO 40%之強度為最高，並將其製作成雙異質發光二結體元件於商用p-GaN 基板上，從歐杰縱深分析觀察到各層元素較無明顯擴散，而I-V 量測發現高溫熱處理下會裂化其接觸電極之電特性，於是使用硫化銨對p-GaN 進行硫化處理去除p-GaN 的原生Ga-O 鍵結，造成Ga 空缺以提升表面受體濃度，優化p-GaN 與其接觸電極材料Ni/Au 之接觸特性，而n 型區域則濺鍍上一層薄ZnO 薄膜以改善AlN-ZnO 40%與ITO-ZnO 33%的接觸特性，其接觸特性從2.34E-03 Ω ㎝
2 改善到8.54E-04 Ω ㎝ 2，而改善雙異質結構（AlN-ZnO 40%/ZnO/AlN-ZnO 40%）則可以達到最高氧化鋅能帶邊緣放射提昇，藉由最佳化結構(AlN-ZnO (40%)/ZnO/AlN-ZnO(40%))製作與n 型電極接觸特性優化等方式，提升氮化鋁-氧化鋅/氧化鋅雙異質接面發光二極體的短波長發光。

關鍵字

射頻磁控共濺鍍 ； 氮化鋁 ； 氧化鋅 ； 雙異質結構 ； 發光二極體

並列摘要

AlN-ZnO cosputtered films were made of radio-frequency magnetron cosputtering system by using target AlN and ZnO. Film crystallinity and optoelectronic properties after
annealing at 700℃ for 30min under vacuum ambient were improved. The use of un-doped zinc oxide thin films with different doping ratio AlN – ZnO sputtering film produce different heterostructures which are N-ZnO, AlN-ZnO(40%)/ZnO/AlN-ZnO(20%) and AlN-ZnO(40/%)/ZnO/AlN-ZnO (40%). Exploring the three structures of zinc oxide NBE intensity measured by the room temperature photoluminescence, we found the intensity of the
AlN-ZnO 40/ZnO/AlN-ZnO 40% is the highest, and making double heterojunction LED junction body components in the commercial p-GaN substrate observes no significant
diffusion in each element layer according to the Auger depth analysis, in I-V measurements,found that the high-temperature heat treatment will cause electrical characteristics crack of contacted electrodes, thus, proceeding vulcanization treatment with ammonium sulfide to
p-GaN to remove native Ga-O bonding of p-GaN, cause Ga vacancy and enhance surface receptor concentration. Optimized p-GaN and contact features of the contacted electrode material, Ni / Au. By sputtering a thin layer of ZnO to n-type region can improve the contact
characteristics of the AlN-ZnO 40% and 33% of the ITO-ZnO from 2.34E-03 Ω ㎝ 2 to 8.54E-04 Ω ㎝ 2. And the improvement of the double heterostructure （AlN-ZnO40%/ZnO/AlN-ZnO 40%）leads to the highest enhancement of zinc oxide band edge radiation.Trough structure optimization (AlN-ZnO (40%)/ZnO/AlN-ZnO (40%) and n-type electrode
contact characteristics enhancement, short-band luminous intensity of AlN –ZnO/ZnO doubleheterojunction light emitting diodes would be effectively improved.

並列關鍵字

RF magnetron sputtering ； AlN ； ZnO ； double heterostructure ； light-emitting diode

參考文獻

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