添加碘化鉀對非真空Cu(InGa)Se2薄膜成長之影響及性質

本實驗利用非真空製程成長 KI鹽類摻雜之銅銦鎵硒Cu(InGa)Se2的光伏元件之吸收層。實驗過程先將銅、銦、鎵、硒四種元素，調整其比例並添加碘化鉀形成CIGS漿料，分別製備出貧銅(Cu-poor)和劑量比(Stoichiometric)、富銅(Cu-rich)三種參數，再藉由球磨法製備成漿料，並利用塗佈法將漿料塗佈於玻璃基板上形成前驅層，再將前驅層置入紅外線快速升溫爐(RTA)內分別進行300 oC到500 oC快速退火製程，持溫10分鐘，使CIGS薄膜具有黃銅礦(Chalcopyrite)結構。利用X光繞射分析儀(XRD)觀察晶體結構變化、掃描電子顯微鏡(SEM)觀察表面形貌的變化、感應耦合電漿質譜分析儀(ICP-MS)和能量散色光譜儀(EDS)來分析成分變化、紫外光可見光光譜儀(UV-Vis)分析光學性質。實驗結果得知，CIGS薄膜在退火後具有黃銅礦結構之特徵峰，隨著熱處理溫度的增加，銅含量比例上升，半高寬變窄，晶粒隨之變大。根據分析，熱處理溫度400 oC、持溫10分鐘時，可得到具有最佳的黃銅礦結構之CIGS薄膜。

關鍵字

銅銦鎵硒；前驅層；黃銅礦結構；非真空；吸收層

並列摘要

This experiment used non-vacuum processes to prepare KI doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first, Cu, In, Ga and Se elements and KI adjusted the ratio of different powders, we can obtain a Cu-poor, Stoichiometric and a Cu-rich type.Inks of the mixtures were made using wet-type ball milling,and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were treated with in a furnace at 300 to 500 oC, respectively, for 10 minutes, then made to reach with heat treatment to then made to reach with heat treatment to from the chalcopyrite structure.The crystal structure changes were observed by X-ray diffraction (XRD),Changer in surface topography were observed by scanning electron microscopy (SEM),Compositions of the films were determined by inductively coupled plasma composition mass spectrometer (ICP-MS) and energy dispersive spectroscopy (EDS),and the band gaps were obtained by photoluminescence (PL) measurement. The experimental result shows that CIGS thin film by annealing had a characteristic peak of a chalcopyrite structure, with increasing annealing temperature, the copper content increased, the half height width of the XRD spectra became narrower and the grains becomes larger.Based on the analysis, we can obtain the best chalycopyrite structured of CIGS thin film at 400 oC 10 minutes.

並列關鍵字

CuInGaSe ； Precursor ； Chalcopyrite ； Non-vacuum ； Absorber Layer

參考文獻

3.S.Zweigart, D. Schmid, J. Kessler et al., “Studies of the growth -mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, vol.146, pp. 233-238, 1995.

4.S.H. Kwon, S. C. Park, B. T. Ahn, K. H. Yoon et al., “Effect of CuIn3Se5 layer thickness on CuInSe2 thin films and devices” Solar Energy, vol.64, pp. 55-60,1998.

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8.R. Noufi, M. Romero, et al.,“CIGS thin film growth model”, NCPV review Meeting,2003.

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添加碘化鉀對非真空Cu(InGa)Se2薄膜成長之影響及性質

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