添加碘化鉀KI鹽類對非真空塗佈Cu2ZnSn(SSe)4薄膜的影響

本實驗是研究銅鋅錫硒硫Cu2ZnSn(SSe)4薄膜在太陽能電池吸收層材料之特性。其製程是利用鋅與硒、錫與硒以1:1的比率配置以及添加少量的碘化鉀KI鹽類並在1050℃的溫度下於石英管中熔煉成二元化合物，然後添加1:1的硫化銅，利用濕式球磨法來製備混和物之漿料以形成貧銅(Cupper poor)、計量比(Stoichiometric)、富銅(Cupper rich)之五元化合物(分別為Cu/Zn+Sn原子百分比=0.8、1.0、1.2、1.5)，並利用旋轉塗佈法將漿料塗佈於玻璃基板上以形成前驅層薄膜。接著，將樣品置於爐管內進行快速退火製成(RTA)，溫度分別為300℃、400℃及500℃，退火時間為10分鐘。利用感應耦合電漿質譜分析儀(ICP)和能量散色光譜儀(EDS)來測量薄膜之成分分析、掃描式電子顯微鏡(SEM)觀察薄膜的表面形貌與橫截面樣貌、X光繞射分析儀(XRD)判斷薄膜的晶體結構、紫外光可見光光譜儀分析薄膜之光學性質。由實驗結果得知Cu/Zn+Sn=1.5之Cu2ZnSn(SSe)4薄膜，在退火溫度為500℃下可以得到鋅黃錫礦結構，有較好的結晶性，其能隙值約在1.4eV~1.5eV之間。

關鍵字

銅鋅錫硒硫；太陽能電池；球磨法；前驅層；漿料

並列摘要

The experiment is investigate on the application of characteristic Cu2ZnSn(SSe)4 for solar cell absorber layer materials. First of all, zinc, selenium and tin, selenium the configuration used in a proportion of one to one and add a small amount of potassium iodide. Were melted in quartz tubes at 1050 oC to form binary compound, then add 1: 1 copper sulfide. Inks of the pentanary compound were made using wet-type ball milling four ingots from Cu-poor, stoichiometric to Cu-rich mixtures (Cu/Zn+Sn atomic ratio = 0.8, 1.0, 1.2 and 1.5, respectively), and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were heated with rapid thermal annealing (RTA) in a furnaceat 300 oC, 400 oC, 500 oC, respectively, for 10 minutes. The compositions of the films were determined by inductively coupled plasma-mass spectrometer (ICP) and energy dispersive spectroscopy (EDS) measurements. Surface and cross-section morphologies were observed by scanning electron microscopy (SEM). The crystal structure of the films was analyzed by X-ray diffraction (XRD). Optical properties were recorded by UV-Vis-NIR spectrometer. Based on the results of the experiments, the thin films (Cu/Zn+Sn atomic ratio = 1.5) with Kesterite structure was obtained by annealing temperature of 500 oC. It also showed higher crystallinity, and the band gap was 1.4 eV~ 1.5 eV.

並列關鍵字

Cu2ZnSn(SSe)4 ； Solar cells ； Ball milling ； The films ； Inks

參考文獻

[1] 江志宏，慶聲科技公司，薄膜太陽能電池。

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[5] B. Xu , X. Li , Z. Qin , C. Long , D. Yang , J. Sun and L. Yi, “Electronic and optical properties of CuGaS2: First-principles calculations”, Physica B, 406, pp. 946-951, 22 December, 2011.

[7] Paifeng Luo,Penghan Yu,Ruzhong Zuo,Jiao Jin,Yuankui Ding,Junda Song,Yutong Chen,” The preparation of CuInSe2 films by solvothermal route and non-vacuum spin-coating process”, Physica B, Volume 405, Issue 16,pp. 3294-3298,2010.

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添加碘化鉀KI鹽類對非真空塗佈Cu2ZnSn(SSe)4薄膜的影響

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