紅光有機發光二極體之分離摻雜特性研究

The Study of Separately Doped Characteristics of Red Organic Light Emitting Diodes

楊川毅(Chuan-Yi Yang)

指導教授 ： 莊賦祥

共同指導教授 ： 吳昭明

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2004年)

https://doi.org/10.6827/NFU.2004.00005

摘要

本論文研究主題涵蓋以下諸點︰使用不同的電洞傳輸層材料以及改
變各種不同的參數對於 OLED 元件發光特性的影響、調變紅光染料 DCJT
摻雜層的厚度、調變紅光染料 DCJT 摻雜的濃度以及極薄近似量子井分離摻
雜層之結構特性研究。在改變電洞傳輸層材料的研究中，若將 TPD 換成
NPB，元件發光亮度將可提高約 10 倍之多；而在改變紅光摻雜染料 DCJT
厚度的研究中，DCJT 摻雜在 Alq3 中的濃度固定為 25%，進而改變其摻雜
在 Alq3 中的厚度，由實驗結果發現當摻雜層的厚度由 40 nm 降至 10 nm，
電激發光之光譜出現愈強的趨勢；而在調變紅光摻雜染料 DCJT 濃度的研究
中，DCJT 摻雜在 Alq3 中的厚度固定為 20 nm，改變 DCJT 摻雜在 Alq3 中
的濃度由 1% 至 25%，由實驗結果可以觀察到電激發光的光譜由黃光變為
紅光，且當摻雜濃度增加，元件的電激發光光譜強度產生衰減的現象，此
驟熄消光之現象稱為濃度抑制或螢光自滅，不過元件會更接近 CIE 色度座
標的標準值紅光。在極薄近似量子井分離摻雜結構研究中，將紅光摻雜染
料 DCJT 以極薄之分離摻雜方式摻雜在 Alq3 中，並改變極薄摻雜層的厚度、
位置、個數及間距等參數來調變其發光特性。最後利用 C6 與 DCJT 雙摻雜
結構更可將能量大幅由 Alq3 轉移至 DCJT，提升發光亮度。

關鍵字

non

並列摘要

This research is composed of several major parts. First of all, hole transport
layer materials and other parameters are changed to obtain the optimum
structure, then the concentration of red dopant DCJT is considered. Besides, we
studied the luminance characteristics of ultra thin and extremely similar to
quantum well doped structured. As far as hole transport layer material is
concerned, the luminance of NPB-use device is about 10 times more than that of
TPD-use device. In the part of doping-thickness-tuning, we set the concentration
of DCJT 25%. When thickness of red doping layer is 10 nm, the luminance
characteristics of corresponding device is better. About
doping-concentration-tuning, the thickness of DCJT doping layer is fixed to 20
nm, and then the concentration of DCJT in Alq3 is changed (1%-25%). The
peak of Electro-Luminescence spectra varies from yellow light to red light is
observed; According to the results of experiments, when the concentration of
DCJT increased, it will decrease the luminance characteristics of the
corresponding device. This phenomenon is called "Concentration Quenching."
In the other hand, the device depicts pure red light, the CIE coordinates is
extremely close to (0.65, 0.35). Last but not least, This part of study is the
quantum-well-doping structure of OLED where red dopant dye DCJT is doped
into the host emitting layer (Alq3) by ultra thin quantum well doping. The
parameters in the quantum well layer, including its width, position, number and
spacing between quantum wells, are changed to study their effects on
electroluminescence characteristics. It is found that both ultra thin double doped
structure and C6-DCJT dual doped system can efficiently increase the
luminance and efficiency of OLED device.

並列關鍵字

non

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