高溫化學氣相沉積系統之設計與製作

科技不斷的在進步，伴隨著半導體製程技術不斷向上提升，市場應用範圍越來越廣泛，材料需求要求越來越高，現傳統電子材料已逐漸無法滿足市場的需求，高溫下製程之薄膜如碳化矽(SiC)等；不論是硬度、熔點、熱傳導係數、能係(eV)等皆具有優異之特性，因而受到各界的注重，應用範圍亦日趨廣泛。本研究技術是為了能在高溫下(1350℃)，以化學氣相沉積法沉積之薄膜所設計製作之系統，運用真空系統、溫度控制、真空壓力控制、氣體通路等技術，溫度需達到1350℃及真空可控制在100 Torr，進行整合設計，並經組裝、調機、測試，完成一套化學氣象沉積系統研究開發，製成薄膜如碳化矽(SiC)之結構實驗與應用在機械元件之強化、光電元件、高功率元件上開發。本論文針對許多研究參數，如石墨基座形式大小及射頻之頻率、感應線圈的圈數及範圍等因素造成溫度的影響，及射頻功率輸出穩定性，與輻射熱下對其真空計與機台架產生高溫等問題之改善，系統完成後之後續改善，現今此系統溫度已可達到1600℃，升溫速率可達每秒10℃。

關鍵字

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並列摘要

Due to technique improving and semiconductor process has made great progress, more and more application was put to use in this field. Beside that, material requirement is getting seriously, and traditional material couldn’t fulfil needs of market. Therefore, why the SiC is so popular in this time! However, the hardness, melting point, thermoconductivity coefficient and eV are provided with excellent property, and application scope are more and more popular. This research is in order to develop a new system for film deposition, make use of vacuum system, temperature control, pressure control and gas inlet design for high temperature (1350℃) and vacuum of 100 torr. And then, after integration, assembly, fine tuning and testing, to complete this set of CVD system for R&D. It will be used film deposition (ex.: SiC), for reserching experiment of strengthening structure and mechanical component, developing of photonic and high power device. The paper, focus on a lot of parameter studying. For example, the shape of graphite carrier, RF frequency and radiant heat cause high temperature in gauge and system rack. After improving, now, the temperature can be used to 1600℃, and heating rate also can be reached to 10℃/sec.