添加Si對非真空塗佈Cu2ZnSn(SSe)4薄膜的影響

The Effects of Additional Si on Non-vacuum Printed Cu2ZnSn(SSe)4 Thin Films

謝明進(Ming-Chin Hsieh)

指導教授 ： 楊立中

國立虎尾科技大學/工程學院/材料科學與工程系材料科學與綠色能源工程碩士班/碩士(2017年)

摘要

本實驗是研究銅鋅錫硒硫Cu2ZnSn(SSe)4薄膜在太陽能電池吸收層材料之特性。其製程是利用鋅與硒、錫與硒以1:1的比率配置在1050℃的溫度下於石英管中熔煉成二元化合物，然後添加1:1的硫化銅與微量的矽粉末(Si)，利用濕式球磨法來製備混合物之漿料以形成貧銅(Cupper poor)、計量比(Stoichiometric)、富銅(Cupper rich)之五元化合物(分別為Cu/Zn+Sn原子百分比=0.6、0.8、1.0、1.2)，並利用旋轉塗佈法將漿料塗佈於玻璃基板上以形成前驅層薄膜。接著將樣品置於爐管內進行快速退火製程(RTA)，溫度分別為300℃、400℃及500℃，退火時間為10分鐘。
利用掃描式電子顯微鏡(SEM)觀察薄膜的表面形貌與橫截面樣貌、感應耦合電漿質譜分析儀(ICP)和能量散色光譜儀(EDS)來測量薄膜之成分分析、X光繞射分析儀(XRD)判斷薄膜的晶體結構、紫外光可見光光譜儀分析薄膜之光學性質。由實驗結果得知添加矽的Cu/Zn+Sn=1.0之Cu2ZnSn(SSe)4薄膜，有效的降低了退火所需溫度，在退火溫度為300℃下可以得到鋅黃錫礦結構且有較好的結晶性，其能隙值約在1.5eV左右。

關鍵字

銅鋅錫硒硫 ； 太陽能電池 ； 球磨法 ； 前驅層 ； 漿料

並列摘要

The experiment is investigate on the application of characteristic Cu2ZnSn(SSe)4 for solar cell absorber layer materials. First of all, zinc, selenium and tin, selenium the configuration used in a proportion of one to one and add a small amount of potassium iodide. Were melted in quartz tubes at 1050 oC to form binary compound, then add 1: 1 copper sulfide and a trace amount of silicon powder (Si). Inks of the pentanary compound were made using wet-type ball milling four ingots from Cu-poor, stoichiometric to Cu-rich mixtures (Cu/Zn+Sn atomic ratio = 0.6, 0.8, 1.0 and 1.2, respectively), and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were heated with rapid thermal annealing (RTA) in a furnaceat 300 oC, 400 oC, 500 oC, respectively, for 10 minutes.
The compositions of the films were determined by inductively coupled plasma-mass spectrometer (ICP) and energy dispersive spectroscopy (EDS) measurements. Surface and cross-section morphologies were observed by scanning electron microscopy (SEM). The crystal structure of the films was analyzed by X-ray diffraction (XRD). Optical properties were recorded by UV-Vis-NIR spectrometer. Based on the results of the experiments, the thin films (Cu/Zn+Sn atomic ratio = 1.0) with Kesterite structure was obtained and effectively reduces by annealing temperature of 300 oC. It also showed higher crystallinity, and the band gap was 1.5 eV.

並列關鍵字

Cu2ZnSn(SSe)4 ； Solar cells ； Ball milling ； The films ； Inks

參考文獻

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