建構剪應力之量測裝置與其應用於晶粒接合之評估

Construction of the Measurement Device for the Shear Strength and Application of Die-Attached Bonding

程元祥(Yuan-Hsiang Cheng)

指導教授 ： 陳文瑞

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2012年)

摘要

摘要
本研究針對電子構裝製程中LED晶粒接合部分，自行設計製作一剪應力量測儀器，予以量測LED晶粒與基板間之黏著力量，此量測儀運用直線運動原理，以氣動式泵浦推動載台，於載台上放置已黏妥晶粒之基板，推力計之上推頭，則調整置於晶粒前方，先將進氣控制開關開啟，氣壓泵浦致動桿則伸長，進而推動載台上晶粒頂向推頭，當推頭將晶粒自基板推開剝離，就可由推力計指示器取得晶粒剝離基板之剪應力；故在覆晶封裝黏合製程中，我們選擇銀膠固化、鋁鍺錫共晶接合與錫膏固化，運用自製的剪應力量測儀來測試接合的力量。
本實驗使用LED晶粒規格為1×1mm，基板材質為玻璃，面積為2×2cm，玻璃基板使用溶劑及去離子水將其表面清洗處理，在中央位置點入銀膠，再將LED晶粒放置於上，施與壓力使晶粒-銀膠-基板結合，製作若干試片後，依不同溫度及時間分組置入烤箱使其熱固化。鋁鍺錫共晶接合部份，先在晶粒與基板上鍍上鋁鍺錫薄膜，再運用熱壓合的方式將晶粒與基板接合，過程中採用不同比例之鋁鍺錫金屬和不同溫度來區隔分組試片。錫膏固化部份，以熱壓合方式執行晶粒與基板黏合，在固定溫度不同時間的條件下產生各組試片。
上述三種接合方式所取得試片，將運用剪應力量測儀器量測剪應力值，所得量化資料與顯微觀測情況比對分析後，可作為改善封裝製程及修正設備缺失之參考。

關鍵字

銀膠 ； 錫膏 ； 共晶 ； 黏著應力 ； 封裝

並列摘要

Abstract
This study focused on the chip bonding in the electronic assembling process and self-designed a shear stress measurement system to measure the bonding force between LED chip and substrate, which utilized the linear movement principle to drive the platform by an air pump. We placed a substrate attached with a chip on the platform and adjusted the cylinder head of the thrust meter to the chip front. The air inlet control switch opened and activated the air pump to push forward the lever in order to push the chip on the platform toward the cylinder head. At the moment the chip being pushed away from the substrate, we could obtain the shear stress value for the chip to peel off the substrate by the thrust meter indicator. Thus, in the flip-chip package bonding process, we used the self-developed shear stress measurement system to test the selected silver paste solidification, aluminum-germanium-tin eurectic bonding and tin paste solidification.
The chip size used in the experiment is 1x1mm, while the substrate size is 2x2mm and made of glass. The substrate surface was cleaned using solvent and deionized water and then we placed a small amount of silver paste in the center before placing the LED chip on it. A slight pressure was applied to bond the chip and the substrate with the silver paste. Several samples were made and moved to the oven for solidification according to different temperature and time conditions. Regarding the aluminum-germanium-tin eurectic bonding, we firstly electroplated a thin aluminum-germanium-tin film on both the chip and the substrate, which were then bonded using heat-bonding. The experiment was proceeded in different proportions of aluminum-germanium-tin and temperature to segregate different sample sets. Regarding the tin paste solidification, we bonded the chip with the substrate using heat-bonding and created different samples under the condition of fixed temperature but different times.
The samples derived from the above three bonding procedures were measured the shear stress by the shear stress measurement system. All numeral data is analyzed and compared with the microscope-observed result for the reference of packaging process and equipment deficiency improvement.

並列關鍵字

silver paste ； tin paste ； eutectic ； bond stress ； package

參考文獻

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