以局部表面電漿效應提升氮化銦鎵/氮化鎵藍色發光二極體之效能

Enhanced efficiency of InGaN/GaN blue light-emitting diodes using localized surface plasmon (LSP)

陳煜杰(Yu-Chieh Chen)

指導教授 ： 雷伯薰

國立虎尾科技大學/電機資訊學院/光電工程系光電與材料科技碩士班/碩士(2017年)

摘要

本論文主要探討銀金屬奈米粒子/氧化銦錫及銀金屬奈米粒子/氮化鎵結構所形成的表面電漿共振現象。利用快速熱退火方式使沉積於氧化物上的銀膜形成銀奈米粒子。實驗結果發現銀奈米粒子的直徑及間距與銀膜厚度、退火溫度及退火時間有關。接著我們利用電磁光學模擬套件RSoft模擬軟體分析最佳化銀奈米粒子尺寸大小及間距。模擬結果發現：最佳化為銀奈米粒子的直徑為255nm、間距為880nm。實驗結果顯示在銀膜厚度5nm、退火溫度420℃、退火時間1min及氮氣退火環境等條件下可使銀奈米粒子直徑為255nm、間距為880nm有最佳的光輸出功率。
最後，我們將最佳化銀奈米粒子的直徑及間距引入氮化銦鎵/氮化鎵藍色發光二極體中發現能夠提升發光二極體的效能45.1%。

關鍵字

氮化銦鎵/氮化鎵發光二極體 ； 局部表面電漿 ； 熱退火 ； 銀奈米粒子 ； 電磁光學模擬套件RSoft模擬軟體

並列摘要

We have investigated localized surface plasmon effect from silver (Ag) nanoparticles (NPs)/ indium tin oxide (ITO) and GaN. The Ag NPs was formed by thermal-annealing silver thin film on ITO and GaN. The experimental results indicate that the Ag NP size and period depend on the thickness of Ag thin film, annealing temperature and annealing time. Additionally, we have calculated the optimal Ag NP size and period applied to InGaN/GaN blue light-emitting diode by Rsoft. The calculated results represent that the external quantum efficiency can be enhanced by introducing the optimal Ag NP/ ITO and Ag NP/ GaN as the window layer. Under the following deposition conditions of Ag thin film of 5 nm, annealing temperature of 420℃, annealing time of 1 minutes, and nitrogen (N2) ambience, an optimal Ag NP size and period can be obtained.
Finally, optimal Ag NP/ ITO and Ag NP/ GaN structures will applied to the InGaN/GaN blue light-emitting diodes to enhanced the external quantum efficiency.

並列關鍵字

InGaN/GaN light-emitting diodes ； localized surface plasma ； silver nanoparticle (Ag NP) ； Thermal annealing process ； electromagnetic optics RSoft simulation software

參考文獻

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