氧化鋅奈米柱應用在發光二極體及場效電晶體之研究

Applications of zinc oxide nanorods in light emitting diodes and field effect transistors

鄭又誠(You-Cheng Jheng)

指導教授 ： 蔡振凱

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2010年)

摘要

本研究探討氧化鋅奈米柱應用於發光二極體元件(LED)及場效電晶體(FET)上，單晶氧化鋅(ZnO)奈米柱陣列製備方法採用低成本、低溫的水熱法。首先在經表面改質且無晶種層的p+-Si基板上形成自組裝薄膜，以水熱法來成長氧化鋅奈米柱陣列。氧化鋅奈米柱陣列藉由高解析度X -射線繞射（HRXRD）、場發射掃描電子顯微鏡（FESEM）和光激發螢光光譜（PL）分析其材料特性。藉由FESEM和XRD發現經過表面改質的p+-Si可成長出高均向性一維氧化鋅奈米柱陣列，形成的n-ZnO nanorods/p+-Si的異質結構製作成短波長發光二極體元件，其討論電流-電壓(I-V)特性曲線及電激發光光譜(EL)來觀察n-ZnO nanorods/ p+-Si元件的光電特性。PL與EL分析顯示出氧化鋅奈米柱具有紫外光和可見光發光區域。為了獲得單一根氧化鋅奈米柱傳導特性，將製作單一氧化鋅奈米柱場效電晶體，經由電晶體操作模式判斷氧化鋅奈米柱為n-type半導體材料，其載子移動率為62.33 cm2/Vs、載子濃度為6.868×1014 cm-3、電阻率為1.46×102 Ω-cm。

關鍵字

氧化鋅 ； 水熱法 ； 發光二極體 ； 場效電晶體

並列摘要

In this study, the zinc oxide nanorods arrays were applied in light emitting diodes (LED) and field effect transistors (FET). The single crystalline Zinc oxide (ZnO) nanorods array was synthesized on p+-Si substrate without seed layer using the low-cost and low- temperature hydrothermal method. The substrate surface was functionalized by hydrofluoric acid (HF) and self-assembled monolayer of octadecyltrimethoxysilane [(CH3 (CH2)17Si (OCH3)3, ODS]. ZnO nanorods were characterized by high-resolution x-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM), and photoluminescence (PL). The results of FESEM and XRD indicated that the functionalized surface of p+-Si employed for grown the high-isotropic one-dimensional zinc oxide nanorods arrays was possible. We also report that the fabrication and electroluminescence (EL) of an n-ZnO nanorods/p+-Si heterostructure light emitting diodes. The current - voltage (I-V) and EL characteristics of the photo-electrical characteristics LED devices were observed. The photoluminescence (PL) and EL spectrum show a ultraviolet peak and a visible light emission. The fabrication and characteristics of single ZnO nanorod field-effect transistors (FET) were been done. The ZnO nanorod in this study was n-type semiconductor material determined by FET operation mode. The single ZnO nanorods field effect transistor possesses the electron mobility, electron concentration and resistivity of 62.33 cm2/Vs, 6.868×1014 cm-3, and 1.46×102 Ω-cm, respectively.

並列關鍵字

Zinc oxide ； hydrothermal method ； Light emitting diodes (LED) ； Field-effect transistors (FET)

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