氧化鋅奈米粒子光激發光之研究與電激發光元件的製作

Photoluminescence study of ZnO nanoparticles and Fabrication of electroluminescence device using ZnO nanoparticles

黃耀德(Yau-Te Huang)

指導教授 ： 林清富

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.01800

摘要

本論文的研究主要可分為兩個部分,第一部分為氧化鋅奈米粒子光激發光的研究,我們將氧化鋅奈米粒子沉積於矽基板上,藉由控制高溫退火的條件,來增強氧化鋅光激發光的強度。30nm與5nm的氧化鋅奈米粒子在800℃~900℃的溫度下且Ar流量為100sccm,於大氣壓力下退火70~80min,可獲得較強的光激發光強度。且退火後,5nm的氧化鋅奈米粒子的粒徑可達到600nm。接著改變O2的流量,發現其對於氧化鋅光激發光的增強效果有限。此外發現將30nm的氧化鋅奈米粒子沉積於Si(100),在900℃之下退火20min後,會成長出具有(201)面的優先取向(preferred orientation)的氧化鋅,若沉積於Si(110)上,則會有助於成長出(102)面優先取向的氧化鋅。第二部分為氧化鋅電激發光元件的製作,我們以PMMA混合ZnO作為發光層,發現以ITO/ZnO+ PMMA/Al的結構在順向偏壓下,可發出藍紫光。加入電洞傳輸層TPD後,製作ITO/TPD/ZnO+ PMMA/Al的結構可使元件的藍紫光較均勻。以PVK作為電洞傳輸層,製作ITO/PVK+ZnO+PMMA/Al的結構,元件會同時發出藍光與紫光。另外使用低功函數的Ca來作為陰極材料,製作ITO/ZnO+PMMA/Ca/Al或ITO/TPD+PMMA/ZnO+PMMA/Ca/Al等結構,可增加發光的時間以及元件的壽命,不過由於壽命仍然很短,導致無法量到其頻譜。

關鍵字

氧化鋅奈米粒子 ； 光激發光 ； 電激發光

並列摘要

The research in this paper can be separated two parts. First, photoluminescence intensity of zinc oxide nanoparti-cles can be enhanced and the quality of zinc oxide can be improved by controlling thermal annealing process condition.We deposite zinc oxide nanoparticles on silicon substrate,and it is annealed in high temperature furnace.After zinc oxide nanoparticles are annealed at 800℃ for 70~80min in the atmosphere,the stronger PL intensity can be obtained.When zinc oxide nanoparticles was deposited on Si(100) and it is annealed at 900℃ for 20min in the ambient with the ratio O2/Ar=0.3, the zinc oxide nanoparticle films with preferred (201) orientation can be grown.If zinc oxide nanopartilces was deposited on Si(110),it will contribute to the growth of the film with preferred (102) orientation.Second,zinc oxide nanoparti- cles is used to fabricate electroluminescence devices.We use the mixture of ZnO and PMMA as emission layer.The device can emit violet light for ITO/ZnO+PMMA/Al struc- ture.The hole transport material TPD is used to fabricate the device of ITO/TPD /ZnO+PMMA/Al structure.The device can emit violet light uniformly in the emission area.If we use PVK as hole transport layer,the stronger intensity of blue and violet light can be emitted from the device of ITO/PVK+ZnO+PMMA structure.The metal Ca is used as cathode material to fabricate the device of ITO/ZnO +PMMA/Ca/Al structure or ITO/TPD+PMMA/ZnO+PMMA/Ca/Al structure.It can increase the time of emission and device lifetime.

並列關鍵字

ZnO nanoparticles ； photoluminescence ； electroluminescence

參考文獻

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