- 學位論文
以銀摻雜氧化鋅薄膜製備氧化鋅同質接面二極體之研究
An Investigation on Ag-ZnO Films and Fabrication on Homojunction Diode
摘要
本研究利用射頻磁控共濺鍍系統，分別利用ZnO、Ag靶材，製作未摻雜ZnO薄膜、Ag-ZnO共濺鍍薄膜，經由熱處理活化未摻雜氧化鋅薄膜與Ag-ZnO共濺鍍薄膜，利用霍爾量測兩種薄膜的電特性，可發現未摻雜氧化鋅呈現n型導電型態，銀摻雜氧化鋅呈現p型導電型態，在XRD方面，由於銀的離子半徑比鋅的離子半徑大，導致銀離子取代鋅離子後，氧化鋅(002)衍射峰往低角度移動，電流-電壓特性方面，分別沉積Ni/ITO與ITO-ZnO作為p型氧化鋅電極與n型氧化鋅電極，發現電極與薄膜皆呈現歐姆接觸。本研究在矽基板上製作p-ZnO/n-ZnO結構同質結構二極體，從電流-電壓特性發現，當電壓±2.5 V時，電流比值為0.96，沒有呈現整流特性，因此，將探討p-n氧化鋅同質界面二極體無法量測出整流特性的原因，利用Ni/ITO沉積在p-n接面之頂端，Ni/ITO與p型氧化鋅呈現蕭特基接觸，可得知p型氧化鋅轉變成n型，從XPS圖中可以得知，當Ag-ZnO與n-ZnO接觸後，發現Ag-ZnO薄膜中銀原子是以金屬狀態存在於薄膜中。因此本研究將Ag-ZnO與n-ZnO中間加入一層本質氧化鋅(i-ZnO)，讓空乏區控制在i-ZnO中，從拉曼光譜圖中，發現p-i-n氧化鋅同質結構在412 cm-1明顯的峰值，表示p型氧化鋅沉積於i-ZnO/n-ZnO頂端，p型氧化鋅薄膜中的銀原子會取代鋅原子，在電流-電壓特性方面可以得知，p-ZnO/i-ZnO/n-ZnO同質接面二極體呈現整流特性，而啟動電壓為1.69 V。為了優化同質結構二極體，因此本研究將i-ZnO改變成雙異質結構(AlN-ZnO/ZnO/AlN-ZnO)，並針對不同的主動層厚度，來探討元件特性。從XPS圖中可以發現，Ag-ZnO沉積DH/n-ZnO表面，p型氧化鋅薄膜中銀原子是以銀一價與氧鍵結存在於薄膜中，維持p型氧化鋅，從元件的電流-電壓曲線可以發現隨著主動層厚度下降，啟動電壓與串聯電阻分別隨之下降。
並列摘要
In study,Ag dope ZnO films and undoped ZnO films were prepared by RF magnetron co-sputtering system by Ag and ZnO tragets,using annealing system activates the dopant atoms in the films.The results showed that the undoped ZnO exhibits n-type conductive,and Ag-ZnO exhibite p-type conductive.By XRD diffraction spectra, the peak position of the Ag-ZnO films are lower than normal ZnO (002) peak position of 34.36°.This is caused by Ag ions replaves the Zn ions,because which Ag radius greater than Zn radius.The current-voltage characteristics,Ni/ITO and ITO-ZnO as electrode deposition of p-type and n-type present ohimc contact.In this study, we fabricated p-ZnO/n-ZnO homostructures diode on silicon substrate，In current-voltage characteristics,when the voltage is positive or negative 2.5 V,the current ratio is about 0.96,which shows no rectifying characteristcs,deposited Ni/ION above surface p-n diode,showing the schottky contact,that the p-type ZnO transforms into n-type conductive. XPS diagrams show that when Ag-ZnO and n-ZnO contact, Ag-ZnO film found that Ag atoms are in the metallic state in thin film. In the middle of the Ag-ZnO and n-ZnO added a layer of i-ZnO From the Raman spectra,found that p-i-n ZnO homostructures at 412 cm-1 peak significantly. The p-type ZnO deposited at the top of the i-ZnO/n-ZnO, and the silver atoms replaced the zinc atoms. in the p-type ZnO film In current-voltage characteristics,Ag-ZnO/i-ZnO/n-ZnO homojunction diodes exbihit poor rectifying characteristics,and the diodes turn-on voltage of about 1.69 V.In order to optimize the homojunction diode,change the i-ZnO into a double hetero-junction(AlN-ZnO/ZnO/AlN-ZnO;DH) structure with different active layer of thinckness. XPS diagrams show that Ag-ZnO deposited on the DH/n-ZnO surface, p-type ZnO have that Ag atom is silver and oxygen bond balance in a thin film, maintenance of p-type ZnO. Reducing the thickness of the active layer from the current-voltage measurements found to reduce the series resistance and turn-on voltage.When the double DH is add,the current ratio is higher than p-i-n homojunction diodes.The thermionic emission theory and Cheung’s formula to explore the ideal factor and Schottky barrier.
參考文獻
延伸閱讀
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