應用鋁鍺錫暫態液相鍵結技術於晶片接合面之研究

Study of The Die-Attached Joint by Using AlGeSn TLP Bonded Technology

張奕鉦(Yi-Cheng Chang)

指導教授 ： 陳文瑞

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所在職專班/碩士(2014年)

https://doi.org/10.6827/NFU.2014.00179

摘要

本論文以玻璃為基板蒸鍍上鋁鍺錫薄膜以低溫暫態液相鍵結技術，研究錫
在不同厚度及溫度之應力分析，據表統計隨著錫總厚度增加後使應力有顯著的提高，在溫度300℃錫厚度在3μm時平均剪應力以接近3kg而在未鍍薄金之下則可輕易>3kg，造成其原因為錫0.6μm時因有薄金阻擋著，阻礙了錫的擴散。隨著溫度下降至240℃時各厚度應力開始下降變的不穩定，因錫含量較多短時間溫度無法均勻的傳導熱而使得部分錫無法完整熔融而造成接合不完全使應力下降。之後依不同條件下的熱壓合做SEM及EDS分析，經SEM分析出了鋁鍺錫錫薄膜3μm橫截面圖得到了錫在3μm厚度時與鋁鍺比之間有了較佳比例平衡因此三種元素正相互交替擴散而呈現出較平均分配。在XRD分析上後可得知當錫厚度越高時錫訊號相對性越高而隨之應力也會越高，當溫度下降之後鋁的訊號也相對性變得較多，溫度持續下降之後表面鋁訊號也相對變多。經以上分析出錫3μm為最佳厚度比做特性量測。使用KEITHLEY 2400進行I-V特性量測，其電流無法通過而無法測出其電流特性，其原因為bonding後其阻抗值高變導致電流無法通過，而錫因擴散不均勻導致只有部分表層有連接。

關鍵字

【鋁鍺合金】 ； 【暫態液相鍵結】 ； 【熱蒸鍍】

並列摘要

In this study, it use glass as substrate with thermal evaporation a thin film of Al-GeSn transient liquid phase bonding technology to research Sn in different thickness and temperature’s stress analysis. According to the statistics table, increasing Sn thickness will make the stress analysis significantly improve. When Sn’s thickness is 3μm the average shear stress close to 3kg, without the thin gold plating is easily> 3kg. Because Sn at 0.6μm will be block by the thin gold, the Sn will be obstructed to spread. As the temperature drops to 240 ℃ ,the stress begins unstable. When tin content is high, the Sn can’t be well-distribute, melt and unable to complete bonding the stress drop. Then, does the thermo compression bond to SEM and EDS analysis in different condition. The Al Ge Sn film Sn 3μm’s cross-sectional view obtained the result that when 3μm thickness ratio between the Al and Ge with the balance ratio is preferably. These three elements are well distributed by SEM analysis. According to XRD analysis results, when the Sn thickness is thicker, signals and consequent stress are significantly. The temperature drop, the Al signal becomes relatively more. The temperature continuously drop, the Al signal continuously relatively more. The 3μm thickness‘s Sn is the best thickness to do the characteristics measurement by the anal-ysis’s result. Use the KEITHLEY 2400 to do the IV characteristics measurement, be-cause the electricity can’t pass, it can’t be measure the electricity characteristics. After bonding, the impedance value is too high to pass. Sn’s proliferation is non-uniform, so only the part of surface be connected.

並列關鍵字

【Aluminum-germanium alloy】 ； 【transient liquid phase bonding】 ； 【thermal evaporation】

參考文獻

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