以非真空製程成長Na2Se摻雜之銅銦鎵硒Cu(InGa)Se2薄膜

The Growth of Na2Se Doped Cu(InGa)Se2 Thin Films by Using Non-vacuum Processes

黃永昱(Yung -Yu Huang)

指導教授 ： 楊立中

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2014年)

https://doi.org/10.6827/NFU.2014.00194

摘要

本實驗利用非真空製程成長Na2Se摻雜之銅銦鎵Cu(InGa)Se2的光伏元件之吸收層。首先將銅、銦、鎵、硒四種元素，依不同的比例與添加硒化鈉(∼1.4wt.%)，在溫度1050℃環境下，將石英管中的元素分別熔煉成劑量比、微貧銅及貧銅三種CuInGaSe2的合金元素，再藉由球磨法製備成漿料，並利用旋轉塗佈法將漿料均勻塗佈在玻璃基材上以形成前驅層，再把前驅層置於RTA爐管內分別進行400℃到700℃快速退火製程，並且持溫10分鐘。
　　利用ICP-MS和EDS分析其成份變化、SEM觀察其表面及橫截面的形貌變化、XRD觀察晶體結構之變化、PL分析薄膜能隙之變化、UV-Vis分析薄膜的光學性質。由本實驗結果得知，薄膜在退火後具有黃銅礦結構之特徵峰，且隨著熱處理溫度的增加，銅含量比例上升，半高寬會變窄，晶粒隨之變大。貧銅之CuInGaSe2薄膜在熱處理溫度550℃、持溫10分鐘時，所得到的具有黃銅礦結構（Chalcopyrite）之CuInGaSe2薄膜品質最佳。

關鍵字

銅銦鎵硒 ； 熔煉 ； 前驅層 ； 非真空 ； 黃銅礦結構

並列摘要

In the study, we use non-vacuum processes to prepare NaSe2 doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. First of all , Cu , In , Ga and Se elements with different ratio, and Na2Se compound (~1.4 wt.%) were melted in quartz tubes at 1050℃ to form ingots with stoichiometric, slight Cu-poor and Cu-poor mixtures. Inks of the mixtures were made using wet-type ball milling, and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were treated with rapid thermal annealing(RTA) in a furnace at 300 to 700℃, respectively, for 10 minutes.
　　The compositions of the films were determined by inductively coupled plasma-mass spectrometer (ICP) and energy dispersive spectroscopy (EDS) measurements. Surface and cross-section morphologies were observed by scanning electron microscopy (SEM). The crystal structure of the films was analyzed by X-ray diffraction (XRD), and the band gaps were obtained by Photoluminescence (PL) measurement.
　　Optical properties were measured by UV-Vis-NIR spectra. From the experiment results, the films with chalcopyrite structure were obtained after RTA. With higher RTA temperature, the copper content increased, the half-height width of the XRD spectra became narrower, and grain size became larger. The best quality Cu-poor Cu(InGa)Se2 thin films with chalcopyrite structure were obtained by RTA 550℃, 10 minutes.

並列關鍵字

CuInGaSe2 ； Smelting ； Precursor ； non-vacuum ； Chalcopyrite

參考文獻

57.謝嘉民、賴一凡、林永昌、枋志堯，2005，“光激發螢光量測的原理、架構及應用”，奈米通訊，12卷，2期，頁28-39，5月。

3.S. Zweigart, D. Schmid, J. Kessler et al.,1995, “Studies of the growth -mechanism of polycrystalline CuInSe2 thin-films prepared by a sequential progress”, J. Cryst. Growth, vol.146, pp. 233-238.

4.S. H. Kwon, S. C. Park, B. T. Ahn, K. H. Yoon et al., 1998, “Effect of CuIn3Se5 layer thickness on CuInSe2 thin films and devices” Solar Energy, vol.64, pp. 55-60.

5.S. B. Zhang, S. H. Wei, and A.Zunger, 1997, “Stabilization of ternary compounds via ordered arrays of defect pairs”, Phys. Rev. Lett., vol.78, pp. 4059-4062.

6.F. J. Pern, R. Noufi, A. Mason et al., 1991, “Characterizations of electrodeposited CuInSe2 thin films: Structure, deposition and formation mechanisms” ,Thin Solid Films, vol. 202, pp. 299.