有機發光二極體接面溫度量測技術研究

本研究首先先以下發光有機發光二極體去量測接面溫度並修改其量測方法，接著在量測上發光有機發光二極體的接面溫度及紅外線熱像儀兩種溫度量測方式，加以分析有機發光二極體內部與外部溫度，以探討不同基板之元件操作時，其溫度對元件發光特性的影響。當在玻璃基板元件操作在高電流20 mA時，接面溫度及熱像儀的溫度為50℃及48.7℃，而銅基板元件操作在高電流30 mA時，接面溫度及熱像儀測溫度為37℃及20.38℃，而在相同電流20 mA下，由發光特性曲線圖可發現銅基板元件有較玻璃基板元件佳的發光亮度及效率，銅基板元件亮度及效率為3588 cd/m2及6.5 cd/A，而玻璃基板元件亮度及效率為2455 cd/m2及4.56 cd/A，且在高電流操作條件下，銅基板元件發光效率衰退的幅度亦較玻璃基板元件平緩。接著研究以EY53當做摻雜材料分別摻雜到Alq3及NPB裡，元件結構分別為ITO/NPB(35nm)/Alq3(x%)EY-53(10nm)/Alq3(50nm)/LiF(0.5nm)/Al(75nm) 及ITO/NPB(20nm)/NPB(x%)EY-53(10nm)/Alq3(50nm)/LiF(0.5nm)/Al(75nm)，當Alq3:(10%)EY-53裡有最佳亮度及效率為9685 cd/m2及3.94 cd/A，而在NPB:(11%)EY-53裡有最佳亮度及效率為12100 cd/m2 和 6.13 cd/A.

關鍵字

有機發光二極體；接面溫度；熱影像

並列摘要

First, using bottom emission organic light emitting diodes to measure the junction temperature and to modify its measure method, then this study used two types of temperature measuring methods, the junction temperature measurement of top emission organic light diode and the infrared thermometer, to analyze the inner and outer temperature of the OLED device, to discuss the influence of temperature to the device optoelectronic characteristics for different substrate device operations. When the glass substrate device was operated at a high current of 20 mA, the junction temperature and infrared thermometer temperature were 50 ℃ and 48.7 ℃ respectively; whereas when the copper substrate device was operated at a high current of 30 mA, the measured junction temperature and infrared thermometer temperature were 37 ℃ and 20.38 ℃. Therefore under the same current at 20 mA, it could be realized from the optoelectronic characteristic curves that the copper substrate device had a better optoelectronic brightness and efficiency than the glass substrate device. In addition, at a high current operation condition, the optoelectronic efficiency decay for the copper substrate device was more gradual than the glass substrate device. And then, using EY-53 doped in Alq3 and NPB. The divce structure is ITO/NPB(35nm)/Alq3(x%)EY-53(10nm)/Alq3(50nm)/LiF(0.5nm)/Al(75nm) and ITO/NPB(20nm)/NPB(x%)EY-53(10nm)/Alq3(50nm)/LiF(0.5nm)/Al (75nm). EY-53 doped in Alq3 have best luminance and performance at 9685 cd/m2 and 3.94 cd/A. EY-53 doped in NPB also have best luminance and performance at 12100 cd/m2 and 6.13 cd/A. When EY-53 deoped in NPB have the best luminance and performance which is more than EY-53 doped in Alq3.