氣體阻障層製備於具底角優化之底切圖案化表面之研究

本研究利用標準光微影製程，在聚乙烯對苯二甲酸酯(PET)以及矽基板上製作具有底切(Under-cut)圖案化光阻，以模擬在基板表面的圖案化光電元件及製程中汙染物吸附的形貌，並以四甲基矽烷(Tetramethylsilane; TMS)單體、四甲基矽烷-氧氣以及四甲矽烷-氧(Oxygen; O2) -氨氣(Ammonia; NH3)等混合氣體為源氣體，利用電漿增強化學氣相沉積系統（Plasma-enhanced chemical vapor deposition; PECVD），於低溫環境下、在圖案化光阻表面分別沉積有機矽基(Organosilicon; SiOxCy:H)、氧化矽(Silicon oxide; SiOx)、以及氮氧化矽(Silicon oxynitride; SiOxNy)薄膜的階梯覆蓋性與水氣滲透率變化。研究結果顯示，由於四甲基矽烷氣體前驅物具有較佳的移動率，相較於以四甲基矽烷-氧氣混合氣體所製備之氧化矽薄膜以及以四甲基矽烷-氧氣-氨氣混合氣體所製備之氮氧化矽薄膜，在不同底切位置皆有較佳的薄膜均勻性及底角覆蓋性。為改善有機矽基薄膜之階梯覆蓋性，本研究將開發快速電漿沉積製程(Rapid plasma deposition)並利用田口法(Taguchi method)優化薄膜製程參數，研究中亦將利用選擇性沉積(selective deposition)及改變電極位置沉積有機矽基薄膜，觀察薄膜製備在圖案化光阻表面之形貌，並利用環氧樹脂填補底切圖案表面的孔隙，接著利用相同電漿製程系統，製備氮氧化矽結構，觀察對於優化後的圖案化光阻表面的覆蓋性及水氣滲透率。針對快速沉積製程可以發現，有機矽基薄膜在低瓦數、高壓力的製程條件下，由於粒子平均自由徑變小，使薄膜於底角位置的覆蓋性有所改善。針對田口法結果而言，優化後的有機矽基覆蓋層有較優異的均勻性以及底角覆蓋性。此外，在利用田口法優化後的底切圖案化表面沉積氮氧化矽之薄膜，相較於未優化條件，水氣滲透率有明顯下降，顯示此優化之有機矽基覆蓋層有助於降低底角位置與表面的薄膜厚度差異，進而優化整體的薄膜階梯覆蓋性。以四氟化碳電漿預處理進行選擇性沉積，有助於改善薄膜於底切圖案化表面的覆蓋率，並降低鍍膜前後的抵達角差異。針對更改電極位置而言，在較長的極板距離下，增加了粒子散射至底角的機會，有助於提升薄膜於底切圖案表面的覆蓋性；而以環氧樹脂填補底切圖案化表面的孔隙後，有效改善氣體阻障層沉積於圖案化表面，因底角覆蓋率不佳，造成水氣滲透率衰退的情形。

關鍵字

有機矽基薄膜；無機氮氧化矽；電漿增強化學氣相沉積法；水氣滲透率；階梯覆蓋性；底切圖案化；快速電漿沉積；田口法；選擇性沉積

並列摘要

This study used the standard photolithography process to achieve phoresist with undercut patterns on the polyethylene terephthalate (PET) and silicon substrates to simulate the substrates with patterned optoelectronic device and adsorbed particle. The evolutions on the step coverage of the single organosilicon (SiOxCy:H), silicon oxide(SiOx), and silicon oxynitride (SiOxNy) film as well as the resulting water vapor transmission rate (WVTR) deposited onto the patterned substrates by plasma-enhanced chemical vapor deposition (PECVD) at a low temperature using the tetramethylsilane (TMS) ,TMS-oxygen-(O2), and TMS-O2-ammonia (NH3) gas mixture, respectively were investigated.The resulted showed that the SiOxCy:H film using the TMS glow discharge which had a high surface mobility peformed the better uniformity and step coverage at the corner stage. In order to improve the step coverage of the organosilicon film, this research developed “rapid plasma deposition”, “Selective deposition” and used “Taguchi method” to optimize the process parameters of organosilicon. Also, changing the substrate distance to deposit organosilicon film, and using expoxy to void filling on the corner of the undercut pattern. Followed, using the same plasma processing deposit nitrogen silicon oxynitride to observe step coverage and water vapor permeability of optimization patterned photoresist surface. For the rapid plasma deposition, the sidewall coverage was found to be improved with the pressure increasing and r.f. power decreasing as a consequence of the decrease in the particles mean free path. For the Taguchi method result, the organosilicon film optimized by Taguchi method shows the better uniformity on sidewall coverage and decreases the difference of arriving angle at the corner. In addition, the SiOxNy gas barrier film consecutively deposited on the undercut pattern optimized by Taguchi method and not optimized, the water vapor permeability of optimized one has significant decrease. The optimization organosilicon cover-layer will help to modify the thickness difference of the barrier deposited between the corner stage and the surface to improve the step coverage of the film. In terms on the selective deposition process, the CF4 plasma treated on the undercut patterned PET substrate then deposited organosilicon film shows much better uniformity and sidewall coverage because of the difference of deposition rate.While the longer substrate distance, the organosilicon film shows the better sidewall coverage. Using the expoxy to void filling on the corner of the undercut pattern then deposit the gas barrier, the WVTR degradation wass significant decrease.

並列關鍵字

organosilicon ； inorganic silicon oxynitride ； plasma enhanced chemical vapor deposition ； water vapor permeability ； step coverage ； under-cut patterned ； rapid plasma deposition ； Taguchi method ； selective deposition

參考文獻

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[7].S. R. Kim, M. H. Choudhury, W. H. Kim, and G. H. Kim, 2010, ” Effects of argon and oxygen flow rate on water vapor barrier properties of silicond oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition” , Thin Solid Films, 518, 1929.

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氣體阻障層製備於具底角優化之底切圖案化表面之研究

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