- 學位論文
多層堆疊有機矽基/氮氧化矽氣體阻障層改善水氣滲透及薄膜覆蓋性之研究
A Study on Organosilicon / Silicon Oxynitride Multilayered Barrier Structures to Improve Water Vapor Permeability and Step Coverage
摘要
本研究以四甲基矽烷（tetramethysilane; TMS）、氨氣與氧氣等混合氣體為源氣體，利用電漿增強化學氣相沉積系統（Plasma-enhanced chemical vapor deposition; PECVD），在可撓式塑膠基板以及矽基板上製程，在低溫環境下製備有機/無機多層結構，藉由調變有機矽基薄膜及無機氮氧化矽薄膜的薄膜厚度來做多層堆疊，降低水氣的滲透路徑並提升機械撓曲特性，藉由鈣測法觀察水氣的滲透的情形，並研究薄膜的階梯覆蓋特性對於水氣滲透率的影響。 研究顯示，單層無機氮氧化矽薄膜100 nm擁有較好的薄膜品質(0.036 μm-g/m2/day)以及機械撓曲特性(臨界破裂點12.4 mm)，當加入有機矽基薄膜做為緩衝層後，多層結構的附著度皆提升至5B等級，另外，其三對最佳化有機/無機多層堆疊結構，因為有機矽基層大幅地降低了水氣的滲透路徑，超出了水氣量測儀(MOCON)的量測極限(5×10-3 g/m2/day)，故藉由鈣測法(Calcium test)量測水氣滲透率，於室溫環境下觀察其水氣滲透率約為3.333×10-5 g/m2/day，另外，利用自製撓曲冶具觀察一對、二對以及三對的多層結構，與單層無機氮氧化矽薄膜100 nm、200 nm、300 nm比較，其臨界破裂的曲率，也有明顯的改善，顯示出多層薄膜結構沉積在可撓式塑膠基板上具有較佳的機械撓曲特性，接著研究水氣通過裂紋的滲透機制，利用三對最佳化有機/無機多層堆疊結構與1 μm之無機氮氧化矽薄膜在撓曲至曲率半徑2.5 mm下，透過鈣測法的觀察顯示，其多層結構能有效地降低水氣滲透路徑，使水氣無法輕鬆地通過裂紋直接使鈣金屬氧化，而是僅由一部份的區域進行氧化，顯示出有機矽基層對於降低水氣滲透路徑的貢獻。 最後，本研究將沉積無機氮氧化矽薄膜在光阻圖案化結構以及矽膠微粒的矽基板上，藉由掃描式電子顯微鏡（Scanning Electron Microscope, SEM）探討其階梯覆蓋率，研究顯示，沉積在光阻圖案化結構以及矽膠微粒上時，側壁的薄膜厚度小於預期沉積厚度，影響氣體阻障層的阻障效果，其側壁覆蓋率分別為為64 %以及50.6 %，顯示側壁覆蓋率下降時，將會影響到無機氮氧化矽薄膜的阻障效果。
並列摘要
In this study, tetramethysilane(TMS), a mixed gas of ammonia and oxygen as source gases, etc., the use of plasma enhanced chemical vapor deposition system (PECVD), in the flexible plastic substrate and the silicon substrate manufacturing process, prepared at low temperature organic / inorganic multilayer structure by modulating film thickness of the organic silicon-based thin-film inorganic SiOxNy film to do a multi-layer stack, reduce the infiltration path of moisture and improve the mechanical flexure characteristics, the situation was observed by measuring calcium permeability of water vapor, and the step coverage characteristics of the thin film of water vapor permeability for influence.Studies have shown that a single layer of inorganic SiOxNy film 100 nm has a good film quality (0.036 μm-g / m2 / day) and mechanical flexural properties (critical breaking point 12.4 mm), when added to the organic silicon-based thin film as a buffer. After the layers are attached to the multilayer structure up to Level 5B, in addition, the three of the best organic / inorganic multilayer stack structure, because organic silicon base layer significantly reduces the penetration of water vapor path, beyond the water volume measuring instrument (MOCON) the measurement limit (5 × 10-3 g / m2 / day), so by calcium measurement method to measure the water vapor permeability was observed at room temperature about its water vapor permeability 3.333 × 10-5 g / m2 / day, in addition, the use of self-rule of the deflection observed a pair of two pairs and three pairs of multi-layer structure, with a single layer of inorganic SiOxNy film 100 nm, 200 nm, 300 nm compared to its Critical rupture curvature also improved significantly, showing a multi-layer film structure deposited has better mechanical deflection characteristics on the flexible plastic substrate, then study the penetration of moisture through the cracks mechanism, the use of three of the best organic / inorganic multilayer stack structure with an inorganic SiOxNy film 1 μm radius of curvature of the deflection to 2.5 mm, the measurement method by observing calcium showed its multi-layer structure can effectively reduce the water vapor permeability path, so that the water can’t easily by air Crack calcium metal oxide directly, but only by a part of the region is oxidized, organic silicon base layer shows reduced water vapor permeation path for contribution.Finally, the study of inorganic SiOxNy film deposited in patterned photoresist structure and the silicon substrate silicone particles, with a SEM to explore the step coverage, the study showed, is deposited on the light When the resistance of the patterned structure and the silicone particles, the film thickness of the sidewall deposition thickness is less than expected, the impact of the barrier effect of the gas barrier layer, the sidewall coverage was 64% and 50.6%, showing the sidewall coverage is lowered, the It will affect the barrier effect of inorganic nitrogen silicon oxide film.