氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究

A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process

陳順祺(Shun-Chi Chen)

指導教授 ： 劉代山

國立虎尾科技大學/電機資訊學院/光電工程系光電與材料科技碩士班/碩士(2016年)

摘要

本研究利用標準黃光微影製程，在聚乙烯對苯二甲酸酯(PET)以及矽基板上分別製作具有頂切(Over-cut)以及底切(Under-cut)圖案化光阻，以模擬基板表面的元件結構以及製程中微粒吸附形貌，接著以四甲基矽烷（Tetramethysilane; TMS）單體以及四甲基矽烷-氨氣(Ammonia; NH3)與氧氣(Oxygen; O2)等混合氣體為源氣體，利用電漿增強化學氣相沉積系統（Plasma-enhanced chemical vapor deposition; PECVD），於低溫環境下，在圖案化光阻上分別沉積單層有機矽基(Organosilicon; SiOxCy:H)、單層氮氧化矽(Silicon oxynitride; SiOxNy)薄膜以及連續沉積三對有機矽基/氮氧化矽氣體阻障層結構，觀察氣體阻障層結構對於不同形貌之圖案化光阻的階梯覆蓋性與水氣滲透率變化。研究中亦將利用沉積/蝕刻/沉積(deposition/etch/deposition)電漿製程技術，觀察此方法製備在圖案化光阻表面之形貌，接著再利用相同電漿製程系統，在製備氮氧化矽結構，觀察對於處理後圖案化光阻表面的覆蓋性以及水氣滲透率。研究結果顯示，隨著單層氮氧化矽薄膜沉積厚度增加，對於頂切圖案化光阻覆蓋率有下降的趨勢，進而劣化薄膜的水氣阻障能力。在具有底切圖案化光阻表面分別沉積SiOxCy:H以及SiOxNy結果中發現，SiOxCy:H薄膜相較於SiOxNy在不同底切位置具有較優異的薄膜均勻性及底角覆蓋性。且氣體阻障層沉積在底切圖案化光阻表面的水氣滲透率，將受到底角位置覆蓋率不佳的影響，相較於沉積在平坦PET基板上有顯著的上升。而SiOxCy:H薄膜在四氟化碳-氧氣混合氣體的電漿環境下為表面氟化的化學蝕刻，相較於氮氧化矽薄膜而言有相當快的蝕刻速率。此外，由不同壓力蝕刻之不同底切位置與蝕刻速率關係中得知，蝕刻速率隨著底切位置的提高而增加，此現象將有助於降低底角位置與表面的薄膜厚度差異。

關鍵字

有機矽基薄膜 ； 無機氮氧化矽 ； 電漿增強化學氣相沉積 ； 水氣滲透率 ； 階梯覆蓋性 ； 底切圖案化 ； 頂切圖案化 ； 電漿蝕刻

並列摘要

This study used the standard photolithography process to achieve phoresist with over-cut and under-cut patterns on the polyethylene terephthalate (PET) and silicon substrates to simulate the substrates with patterned element structure and adsorbed particle. Following, prepared single organosilicon (SiOxCy:H), silicon oxynitride (SiOxNy) and three-pairs of the organosilicon/silicon oxynitride barrier structure on the patterned PET and silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature using the tetramethylsilane (TMS) monomer and TMS-oxygen (O2)-ammonia (NH3) mixture,and then observe the variety of step coverage and water vapor permeability gas as barrier layer structure for the different morphologies of the photoresist pattern. Research will also using deposition/etch/deposition process observation the morphology of the patterned photoresist, followed, by the same plasma processing preparaed nitrogen silicon oxynitride to observe step coverage and water vapor permeability of aftertreatment patterned photoresist surface.The results show that the over-cut patterned photoresist coverage devreases as the silicon oxynitride film thickness increases, and further deterioration of the water vapor barrier capability.Results of deposited SiOxCy: H and SiOxNy onto under-cut patterned photoresist, compared SiOxNy with SiOxCy:H, which had more excellent uniformity and corner coverage.Gas barrier layer deposited on the under-cut patterned photoresist of water vapor permeability will be the impact of poor coverage corner position with significant increase, compared to films coated on a flat PET substrate.SiOxCy:H thin film was chemical etching fluorinated in tetrafluoride- oxygen mixture gas plasma environment compared to the SiOxNy with relatively fast etching rate.In addition, the relationship between different positions under-cut and etching rate of different etching pressures know that the etching rate increase as the under-cut position increases, this result will help to reduce top thin film between corner position on difference thickness.

並列關鍵字

organosilicon ； inorganic silicon oxynitride ； plasma enhanced chemical vapor deposition ； water vapor permeability ； step coverage ； under-cut patterned ； over-cut patterned ； plasma etching

參考文獻

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