- 學位論文
硒薄膜與硒蒸氣硒化銅銦鎵金屬前驅層製備銅銦鎵硒薄膜研究
The Fabrication and Characterization of CIGS Films by Se Film and Se Vapor Selenization of CIG Precursor Film
摘要
本論文研究以硒薄膜層與硒蒸氣硒化銅銦鎵(1:0.5:0.5)金屬前驅層製備銅銦鎵硒薄膜，探討在不同的堆疊結構(Glass/Mo/Se/CIG、Glass/Mo/CIG/Se)與硒化退火參數下對銅銦鎵硒薄膜的影響，並進一步的在退火製程中加入硒氣氛，觀察對硒化後薄膜的影響，最後根據前期的研究成果設計製備低鎵與低氧元素的金屬前驅層進行硒化退火，觀察鎵與氧元素在硒化退火過程中所佔的重要地位。 實驗分析結果中發現薄膜在不同的堆疊方式與退火參數下對薄膜的影響，其中Glass/Mo/CIG/Se結構在較短的擴散處理下會阻礙氧元素的脫離而產生銦氧相，藉由較長的擴散處理可使表層的氧脫離得到較佳的銅銦鎵硒結晶形貌，而在Glass/Mo/Se/CIG結構退火後發現底層硒元素皆往表面偏移現象，並在薄膜表層形成銅銦鎵硒的結晶，而當在Glass/Mo/Se/CIG結構退火在充滿硒氣氛的環境下，分析結果顯示在此條件下會使表面產生富銅的結晶，並可使表面高含量的硒原子朝薄膜底部擴散，使薄膜表面硒原子濃度高於底部，避免了硒原子朝表面偏移。 在改變CIG前驅層鎵與氧含量的分析結果中發現，在降低鎵元素含量的條件下，薄膜內部的氧分子較容易偏移至表面，致使表面銦與氧的氧化相。而製備低氧前驅層對於硒化反應則有很明顯的改善，硒原子的擴散不再受到氧原子的阻礙而使硒化深度明顯增加，達到整層薄膜完全硒化的目的。
並列摘要
In this study, CuInGaSe2 films were prepared by Se film and Se vapor hybrid selenization of Cu-In-Ga metallic precursor film, with structures of glass/Mo/Se/CIG and glass/Mo/CIG/Se. Effects of selenization parameters on the CIGS film properties were investigated. The influences of the selenization with and without Se vapor were also analyzed. According to these results, a low Ga-content and low O-content precursor film was used to evaluate the roles that Ga and O played during the selenization process. Among the testing samples, the sample with the structure of glass/Mo/CIG/Se showed In2O3 phase due to the obstruction of oxygen out-diffusion from the film when a short selenization time was used. Long selenization duration can reduce the surface oxygen content and thus obtain better crystalline morphology. If selenized without Se vapor, the precursor film with structure of glass/Mo/Se/CIG showed that Se content at the bottom almost totally diffused to top region, and the CIGS crystals were formed only at the surface. Supplement by Se vapor when selenization leads to Cu-rich crystals and high Se concentration on the sample surface layer to avoid absence of Se at the bottom of the sample. Regarding different Ga- and O-content precursor films, the results showed that oxygen in the low Ga-content precursors significantly moved to surface, and thus leaded to InO3 phase. On the other hand, applying low O-content precursors improved the selenization process, in which Se diffused into the film without obstruction from oxygen, and finally the completely selenized CIGS film could be obtained.
參考文獻
延伸閱讀
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