以非真空製程製備銅鎵二硫（CuGaS2）薄膜於太陽能電池吸光材料之應用

Preparation of Optical Absorber CuGaS2 Thin Films by Non-vacuum Processes for Solar Cells Applications

宋碧雄(Bi-Shiung Sung)

指導教授 ： 楊立中

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2011年)

https://doi.org/10.6827/NFU.2011.00110

摘要

本論文是研究銅鎵二硫（CuGaS2）薄膜在太陽能電池吸收層材料之應用。本實驗是利用球磨法(Ball Milling)來製備成銅鎵二硫前驅物漿料(Ink)，再以旋轉塗佈法(spin coating)將其漿料塗佈於基板上形成CGS2前驅層（precursor）薄膜，所用的前驅物是由CuS、Ga2S3等兩種化合物混合所形成，且可獨立調整兩種前驅物成分比例，以獲得不同的Cu/Ga比。再置於RTP爐管內進行(400-800℃)快速退火製程，藉由高溫擴散(diffusion)，製備出具黃銅礦（Chalcopyrite）結構特性之CGS2薄膜，使用非真空(non-vacuum)製程製備吸收層可大幅降低成本。而CGS2薄膜會隨著Cu含量的增加，半高寬變窄，晶粒尺寸會隨之變大；XRD之特徵峰會隨Cu含量增加向高角度（2θ）偏移。依原始組成Cu/Ga比將薄膜分為Cu-rich與Cu-poor兩種類型，利用X光繞射進行分析，結果顯示CGS2薄膜具有黃銅礦結構之結晶特性。本研究發展新方式製備CGS2前驅層，其熱處理時間不需太長，且可在不通入硒蒸氣或硒化氫等氣體下，基於實驗分析之結果，於熱處理溫度650℃、持溫10min，得到的黃銅礦結構之CGS2薄膜為佳。

關鍵字

銅鎵二硫 ； 太陽能電池 ； 球磨法 ； 前驅層 ； 黃銅礦

並列摘要

The thesis is focused on the application of CuGaS2 for solar cell absorber layer materials. In this study, the nanoparticle ink is prepared using wet-ball milling, and then the ink is deposited on a substrate to form a precursor layer by spin coating. The ink consists of two compound powders, CuS and Ga2S3. By adjust Cu/Ga ratio of CuS to Ga2S3. The precursor layer is placed in RTA furnace, and then heated at the temperature between 400℃ and 800℃ to form the compound layer with chalcopyrite structure. Non-vacuum processing is capable of reducing the cost of manufacturing significantly. CGS2 thin film with the full width at half maximum becoming narrow as the Cu content increases. The mean crystallite size also increases when Cu/Ga ratio is increased. Some displacement towards higher diffraction angles is detected when the Cu content increases. According to the original composition of Cu/Ga ratio, the prepared precursor samples can be classified to two types: Cu-rich and Cu-poor samples based. Microstructural studies are carried out using X-ray diffractometer. The analysis result shows that these samples have chalcopyrite structure. We have developed a novel technique for fabricating CuGaS2 thin film without long heat treatment and selenization. Based on the analysis results of this experiment, CuGaS2 thin film with chalcopyrite structure can be obtained by heating at 650℃ for 10 minutes.

並列關鍵字

CGS2 ； solar cell ； Ball Milling ； Precursor ； Chalcopyrite

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