- 學位論文
金屬-絕緣體-半導體結構之二氧化鈦光檢測器元件研製
Fabrication and Characterization of Metal-Insulator-Semiconductor-Insulator-Metal Structured TiO2-Based Photodetectors
摘要
本論文以二氧化鈦為研究材料，其為良好的寬能隙半導體材料，其具有較佳的穩定性、無毒、低成本、光催化活性較高等優點；利用金屬-絕緣體-半導體-絕緣體-金屬(metal-insulator-semiconductor-insulator-metal, MISIM)結構改善二氧化鈦光觸媒與導電特性。第一部分：利用射頻磁控濺鍍(radio frequency magnetron sputtering)系統技術在康寧玻璃(corning)基板上製作絕緣體-半導體(SiO2/TiO2)結構，藉由改變TiO2與SiO2薄膜，經不同熱退火處理後探討不同厚度的絕緣體-半導體結構與光電特性，並在材料部份經由X光繞射頻譜分析(XRD)、場發射掃描式電子顯微鏡(FE-SEM)對薄膜表面形貌進行分析，用紫外光-可見光光譜儀(UV-VIS)測試其透光性能。 第二部分：使用銀為接觸電極製作成MISIM結構之紫外光檢測器，分析MISIM結構經不同退火溫度後對紫外光波段之光響應變化，在500℃熱處理不同SiO2厚度之檢測器在5V偏壓下暗電流分別為1.28×10-10、2.94×10-11、1.76×10-11。証明MISIM結構之感測器可有效的降低暗電流。 第三部分：利用射頻磁控濺鍍系統與電子束蒸鍍系統製備(TiO2/Ag/TiO2，TAT)奈米結構多層膜於MISIM結構中，探討此結構光學特性，且分析其結構之光偵測器。
並列摘要
In this dissertation, titanium dioxide (TiO2) thin films were prepared by radio frequency magnetron sputtering technique. It is the good wide-bandgap semiconductor material. It has good chemical stability, non-toxicity, low cost, and high photocatalysis. The metal - insulator - semiconductor - insulator – metal (MISIM) structure was in hope to improve the performance of photocatalytic properties and conductivity. The first part is that the SiO2 /TiO2 thin film were deposited on Corning glass substrates by radio frequency magnetron sputtering (rf-sputtering) technique. We could annealing were investigate the optical and electrical performance of SiO2 /TiO2 structure by transform TiO2 thin film. We used high-resolution X-ray diffraction (XRD)、FE-SEM were then utilized to characterize the surface morphology and UV-VIS transmittance spectra (UV-VIS) examine transmittance of the SiO2 /TiO2 thin film. The second part is we could fabricate the silver electrodes of MISIM structure UV PDs with optimization condition of growth conditions of insulator - semiconductor structure and discuss about the characteristic of the photoresponse as a function of annealing conditions. It can be found that dark current of different structure photodetectors were 1.28×10-10 (MSM-PDs)、1.76×10-11 (MISIM-PDs) at 5V bias. We could observe that dark current of MISIM structure has reduction. The third part is discusses that we prepared the TiO2/Ag/TiO2 (TAT) nano multilayer film into the MISIM structure UV PDs used radio frequency magnetron sputter system and electron gun evaporator system. Explore this structure optical and electrical performance. Additionally, PDs with TAT nano multilayer film have been fabricated and characterized.