錫摻雜氧化銦(ITO)薄膜利用真空沉積可得具有優良光學和電學性能之透明導電氧化物薄膜,目前已被廣泛使用。由於ITO真空製備過程維護費用昂貴、銦金屬成本高,不易回收,因此認為無貴重金屬的氧化鋅濕式製備過程適合取代ITO導電膜。本研究利用溶膠凝膠法製備摻雜少量銦之ZnO:In(氧化鋅銦)透明導電薄膜並探討其性質。文獻中常用的溶劑為乙二醇甲醚(EGME),但EGME為第二類毒性化學物質,因此本論文選用無毒性之丙二醇甲醚(PGME)作為溶劑,探討不同銦掺雜濃度及不同熱處理退火溫度對氧化鋅銦導電薄膜之光學與導電性質影響。利用場發射掃描式電子顯微鏡(FE-SEM)觀察表面及橫截面微觀結構、X光繞射光譜儀(XRD)分析其主要晶體結構、X光光電子能譜(XPS)分析成分元素鍵結能、四點探針(FPP)測量薄膜電阻率、紫外光可見光光譜儀(UV-VIS)測量薄膜光學透光性。實驗結果顯示以丙二醇甲醚作為溶劑,銦摻雜5at%含量第一階段氮氣退火溫度550℃一小時再經第二階段5%氫氣+95%氮氣退火溫度500℃一小時,可得到多晶纖鋅礦結構,而且有低電阻率6.4×10-3Ω•cm的氧化銦鋅(IZO)透明導電薄膜。
Tin-doped indium oxide (ITO) deposited by vacuum process with excellent optical and electrical properties have been generally used as transparent conductive oxide thin films. In view of high cost and recycles not easily of vacuum process, zinc oxide films synthesized by wet chemical process is therefore regarded a more suitable candidate to replace ITO. In this work sol-gel method was used to synthesis transparent Indium doped zinc oxide (ZnO;In, IZO) with 500 nm thickness for large scale production of CIGS solar cell. The experimental parameters contained the amount of doping In and various annealing temperature. The structure, electrical and optical properties of IZO thin films are investigated by a field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), X-ray diffractometer (XRD), four-point probe (FPP) and ultraviolet visible light spectroscope (UV/VIS). The experimental results showed the IZO films were Wurzite crystalline with (100), (002) and (101) orientation, had above 70 % visible light transmittance and lower electrical resistivity after annealed in N2 atmosphere. The IZO with 5% In samples had low electrical resistivity 6.4×10-3 Ωcm, which were synthesized with PGME solvent and annealed at 550 ℃ in N2 atmosphere and 500 ℃ in reduction atmosphere for one hour, separately.