本研究主要在銅基材於硫酸鹽鍍浴中並以次磷酸鈉作為還原劑進行無電鍍沉積Co-Ni-P薄膜,以及利用直流電源取代鍍浴中之次磷酸鈉, 而進行電鍍Co-Ni薄膜。鈷鎳離子是以鍍浴中的CoSO4˙7H2O和NiSO4˙6H2O之金屬鹽為來源,最後主要改變鍍浴中鈷鎳金屬比以及鍍浴溫度、pH值、錯合劑與還原劑之濃度、析鍍時間、電鍍電位,並比較無電鍍與電鍍兩者其薄膜形貌和被還原出的鈷鎳離子含量之差異。利用掃描式電子顯微鏡(SEM)和X射線繞射儀(XRD)來研究膜之表面型態、化學組成與相結構,而以能量分散光譜儀(EDS)來分析膜之成分。分析結果顯示薄膜隨析鍍時間的增加,表面會由小晶粒逐漸形成為較大的晶粒,且由晶粒堆積形成一連續之薄膜;以次磷酸鈉為還原劑的無電鍍沉積Co-Ni-P薄膜會呈現一非晶相,而利用直流電源電鍍則有其結晶之型態;在含量分析方面,當隨著鍍浴溫度的提升,析鍍出來的鈷鎳原子之含量會隨著溫度上升而增加,磷含量方面會隨著鈷鎳金屬比[Co/(Co+Ni)]的增加逐漸下降;電鍍當兩極的電位差較小時(1.75V),則會有大量鈷原子被還原出來,而當電位差變大時(2.25V),則反之有多數的鎳原子被還原出。
In this work the electroless Co-Ni-P films were deposited on copper substrate in sulfate baths in which sodium hypophosphite was used as reducing agent. The Co-Ni films was also deposition on Cu substrate by direct current power. The source of cobalt and nickel ions is from CoSO4˙7H2O and NiSO4˙6H2O, respectively. In the deposition process, metal ratio of cobalt and nickel in the plating bath, bath temperature, pH value, complexing agent concentration, reducing agent concentration, deposition time and voltage value. The surfase morphology, chemical composition, microstructure of the films have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersive spectroscopy (EDS). The results showed that the film thickness increased when increasing deposition time. The film consisted of very small grains. The electroless Co-Ni-P thin films have an amorphous phase, and the film from direct current electroplating is crystalline, the amount of cobalt and nickel in films increase when the plating bath temperature was increased, and the phosphorous content decreased when the metal ratio [Co/(Co+Ni) in bath] was increased. The cobalt was easier reduced than nickel at 1.75V of voltage, and the nickel was easier reduced than cobalt at 2.25V of voltage.