摻雜鋁之氧化鋅奈米結構應用於壓電式發電機元件

本研究以低溫水溶液法成長一維摻雜鋁的氧化鋅奈米結構，在氧化銦錫基板與可撓性塑膠基板上，並將此奈米結構應用於壓電式奈米發電機。過程中，探討不同摻雜濃度、溫度和反應時間下，對氧化鋅奈米柱成長型態與特性的影響。利用光譜儀分析摻雜與非摻雜一維氧化鋅奈米結構的發光特性，與測量具透光性氧化銦錫基板的穿透率。研究發現溫度或反應時間增加，奈米柱高度與直徑隨之增加。摻雜與非摻雜鋁的氧化鋅結構有顯著的不同，這是由於鋅離子和氫氧根離子的結合受到摻雜濃度的影響。發光量測發現氧化鋅奈米結構在紫外光波段與藍光波段都有良好的峰值。拉曼分散光譜量測氧化鋅的物質結構。以穿透式電子顯微鏡觀測其內部結構與晶格影像。製作電極並且與氧化鋅奈米柱組裝成奈米發電機以超聲波驅動量測微量電流。探討此壓電式奈米發電機的電流特性與蕭特基障壁。

關鍵字

氧化鋅；液相磊晶法；氧化銦錫；壓電式奈米發電機；超聲波

並列摘要

Using low temperature wet chemical growth of one-dimensional aluminum-doped zinc oxide nanostructure on indium-tin oxide (ITO) substrates and flexible plastic substrates. Discuss effects of growth temperatures, concentrations, and reaction time on the morphology and characteristics of the ZnO nanorods. Photoluminescence (PL) and UV/Vis spectrometer were also employed to understand the luminescent and transmittance characteristics of the nanorods. This was due to the combination of Zn+ ions and OH- ions which affected by doping concentration. The results showed that when the temperatures and reaction time increased, the diameters of the nanorods increased. The photoluminescence measurements showed that the ZnO nanorods had good ultraviolet emission and blue emission. Furthermore, we assembled the ZnO nanorods arrays with zigzag electrodes for nanogenerators which driver by ultrasonic vibration. The current performance and Schottky barrier of the nanogenerators were also discussed.

並列關鍵字

ITO；Photoluminescence；ZnO；nanorods；nanogenerators

參考文獻

[1] X. Wang, J. Lin, J. Song, and Z. L. Wang, “Integrated Nanogenerators in Biofluid”,Nano Lett. 7, 2475 (2007)

Google Scholar

[2] X. Wang, J. Song, J. Liu, and Z. L. Wang, “Direct-Current Nanogenerator Driven by Ultrasonic Waves”,Science 316, 102 (2007)

Google Scholar

[3] J. Lin, P. Fei, J. Song, X. Wang, C. Lao, R. Tumala, and Z. L. Wang, “Carrier Density and Schottky Barrier on the Performance of DC Nanogenerator”, Nano Lett. 8, 328 (2008)

Google Scholar

[4] Z. L. Wang, X. D. Wang, J. Song, J. Liu, and Y. F. Gao, “Piezoelectric Nanogenerators for Self-Powered Nanodevices”, IEEE Perv. Comp. 7, 49 (2008)