高功率脈衝磁控濺射(High Power Impulse Magnetron Sputtering, HIPIMS)為一新興的物理氣相沉積技術。藉由其極高的瞬間峰值電流與靶材功率密度來獲得優異的薄膜性質,例如高硬度、高附著性及良好的摩擦學性能。脈衝電源藉由低佔空比的輸出來控制電漿放電,其電漿密度可達1019/m3,離化率更可高達70~100%。在本研究中,使用鈦鋁合金靶材(Ti:Al = 50:50,純度99.9%),藉由高功率脈衝磁控濺鍍技術於不同基材上沉積氮化鈦鋁(AlTiN)薄膜,探討在不同佔空比參數對薄膜性質與結構之影響。 研究中利用差動式碳棒與電流勾表量測鈦鋁合金靶材之瞬間電壓與瞬間電流值,並計算其瞬間功率密度。最後以掃描式電子顯微鏡、原子力顯微鏡、X光繞射儀、穿透式電子顯微鏡、X光光電子能譜儀及奈米壓痕試驗儀對薄膜結構與性質進行分析。 研究結果顯示,隨著佔空比的降低,靶材的瞬間電流值、瞬間電壓值,與瞬間功率值會隨之上昇,而瞬間電流密度值與瞬間功率密度值也隨著佔空比的下降而增加;薄膜表面顯微結構呈現顆粒狀的組織,佔空比參數的下降對表面粗糙度值並無顯著的影響,薄膜斷面顯微結構呈現柱狀晶的組織;隨著佔空比參數的下降,薄膜沉積率隨之降低;X光繞射儀分析結果顯示薄膜相結構主要由氮化鈦鋁 (TiAlN),成長優選方向為(200);穿透式電子顯微鏡分析結果顯示,佔空比2%下所製備之TiAlN薄膜其結晶性較佳;奈米壓痕分析結果顯示,隨著佔空比的下降,薄膜硬度值隨之提高,在佔空比2%時具有最高的硬度值為26.29 GPa, 楊氏模數為351.47 GPa。H3/E2比率介於0.024與0.148之間;H/E比率介於0.045與0.075之間。
High power impulse magnetron sputtering (HIPIMS) is a novel physical vapor deposition technique, characterized by its ultra-high peak current and peak power density to achieve unique thin film properties, such as high hardness, good adhesion and tribological performance. A pulsed power with low duty cycle is used to generate the plasma to having a plasma concentrations up to 1019/m3 and an ionization rate of 70 to 99%. In this study, Ti-Al-N thin films have been deposited on different substrates using Ti50Al50 (purity: 99.99%) alloy target by HIPIMS. The influences of duty cycle on the microstructure and properties of the Ti-Al-N films were investigated. In this study, we use differential carbon rod and current clamp meter to measure the peak voltage and the peak current of the TiAl alloy target. The peak power density was therefore calculated. The films are characterized by using scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, nanoindentation test. The experimental results showed that the peak current, peak voltage and peak power increased linearly as the duty cycle decreasing from 50% to 2%. This XRD and XPS analysis indicate that the Ti-Al-N coatings comprise TiAlN phase in the film. Both the maximum hardness and elastic modulus of the films were shows 26.29 GPa and 351.47 GPa, respectively. The H3/E2 ratio between 0.024 to 0.148 and H/E ratio between 0.045 to 0.075.