氧化鋅是便宜又實用性的II-VI族材料。摻雜三價元素(鋁、鎵和銦)在氧化鋅上,可以提升氧化鋅本身電性和光傳輸。本篇分成兩部分,第一部分是製備鋁摻雜氧化鋅並用水溶液法生長氧化鋁鋅奈米片;第二部分是用熱蒸鍍做成金電極並生長氧化鋁鋅奈米片進行光檢測器量測與場發射元件應用。第一部分主要清洗基板與濺鍍晶種層並水溶液法進行生長。最後用儀器分析表面形貌(SEM)、結晶度(XRD)、光學的特性(PL)和元素含量(EDS)跟(TEM)。分析量測是使用不同溫度和濃度進行水溶液法生長選取最佳的參數,接續會進行第二部分。第二部分是在晶種層上蒸鍍一層傳統的指叉狀電極在用水溶液法進行生長。並用365nm的紫外光進行光檢測器量測以及量測場發射。光檢測器量測使用Keithley2410在1伏特偏壓下進行紫外光開關量測並比較氧化鋅和氧化鋁鋅奈米片。研究結果發現氧化鋅與氧化鋁鋅的表面形貌並不會因摻雜有所改變,但在光學特性量測摻雜鋁會因摻雜鋁進去會降低550nm氧空缺的缺陷。摻雜鋁進去會提升電性使得氧化鋁鋅奈米片更加導電。
Zinc oxide is low-cost and practical II-VI chemical materials. Doped with trivalent elements Aluminum(Al), Gallium(Ga) and Indium(In) of zinc oxide can be improved to enhance the electrical characteristics of the zinc oxide primary. This work in two parts, the first part is the Aqueous solution method of Al-doped ZnO nanosheets growth. The second part is a layer deposited by thermal evaporation on a gold electrode in Zon seed layer and light detection and measurement field emission applications. The first part of the substrate cleaned and RF sputtering the seed layer and Aqueous solution growth method. Finally, the characteristic surface morphology (SEM) observation of instrumental analysis, crystal (XRD), optical properties (PL) and the element content (EDS) and (TEM). Determination of Aqueous solution growth method at different temperatures and concentrations, choose the best parameters. The second part will be to choose the best parameters. The second part is deposited on the seed layer is a layer of a conventional interdigitated electrodes in Aqueous solution grown. With 365nm UV light detector measuring and measurement field emission. Light detection tolerance measured using Keithley 2410 at 1 volt bias voltage switch ultraviolet measurements and compared ZnO and AlZnO nanosheets. ZnO and AlZnO surface morphology and doping does not change, but the optical properties of the measurement due to the Al-doped ZnO into the oxygen vacancy defect reduction at 550nm. Al-doped ZnO will increase electrical makes more conductive ZnO nanosheets.