氮化鋁薄膜用於高功率發光二極體散熱研究

近年來，隨著發光二極體LED的功能提升，應用於各式各樣的產品，也逐漸融合於我們的日常生活中，發光二極體LED (Light-Emitting Diode)為節能環保照明光源，比傳統照明光源，具有省電、節能及壽命長等特點。因應各國政府致力推廣節能政策，環保意識抬頭，因白熾燈泡會有汞污染的情況下禁用，加LED技術逐漸成熟，照明成本逐漸下降，有助於激勵LED照明的發展。但是實際上LED隨著發光強度增加，同時也會產生大量的熱，受到封裝灌膠的影響，P/N接面發光時產生光與熱，若散熱設計不佳時，LED發光產生的熱量會累積於P/N接面，這些熱會照成LED發光強度效能減低、使用壽命衰減，溫度過高易會造成內部各元件熱膨脹係數不均，導致元件間承受過大的機械應力而毀壞，所以良好的散熱方式，是決定LED工作是否穩定的重要關鍵因素。本研究本研究係利用DC濺鍍法備製氮化鋁薄膜於玻璃、矽兩種不同基板上分為三個階段，第一階段為研究氮化鋁薄膜的成長機制，之後使用濺渡系統(Sputter) 在不同時間條件下，於矽基板上成長氮化鋁並分析薄膜特性。第二階段為將氮化鋁薄膜進行熱處理，分析氮化鋁在不同退火時間其薄膜特性。第三階段為將LED封裝在鍍上氮化鋁薄膜的矽基板上，量測氮化鋁薄膜的熱阻，分析與AlN薄膜在LED封裝機制中對散熱方面的優缺比較。

關鍵字

氮化鋁

並列摘要

In recent years, with the light-emitting diode LED to enhance the function, used in a wide range of products, but also the gradual integration in our daily life, light-emitting diode LED (Light Emitting Diode) light source for the energy saving than Traditional lighting with energy saving, energy saving and long service life. With the efforts of Governments to promote energy conservation policy and with the awareness of environmental protection, because incandescent bulbs have mercury pollution is disabled, plus mature LED technology, lighting, decreasing the cost and help stimulate the development of LED lighting. But, in fact, increased luminous intensity LED with, but also produce large amounts of heat, by the impact of plastic irrigation package, P / N junction light-emitting light and heat generated when, if the thermal design is poor, LED light heat will be accumulated in P / N junction, the heat will be adhered to as to reduce the effectiveness of LED luminous intensity, life decay, easy to cause the internal temperature is too high thermal expansion coefficient of each component uneven, resulting in excessive elements will bear the mechanical stress and damage, so Good heat dissipation, LED work is to determine the stability of the key factors. In this study, this study using DC sputtering system of aluminum nitride films prepared on glass, two kinds of different silicon substrate is divided into three phases, the first film to study the growth mechanism of aluminum nitride, and then use the splash transition system (Sputter) conditions at different times, the growth of AlN on silicon substrate and analysis of film properties. The second stage is the film heat-treated aluminum nitride, aluminum nitride at different annealing analysis of the time the film characteristics. The third stage of the LED package in aluminum nitride thin film coated on the silicon substrate, measuring the thermal resistance of AlN thin films, analysis and AlN thin films in the LED encapsulation mechanism for cooling the advantages and disadvantages compared.