具被覆層的非晶氧化銦鎵鋅薄膜電晶體之電性分析

Electrical Characteristic Analysis of A-IGZO Thin-Film-Transistors with Passivation Layers

顏士評(Shih-Ping Yan)

指導教授 ： 姬梁文

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2012年)

摘要

非晶的氧化物與透明寬能隙的氧化物半導體元件有成為新世代元件的潛力。本論文主要研究非晶型態的氧化銦鎵鋅電晶體(TFT)之光電元件製備與特性分析。
本論文中利用二氧化矽作為氧化銦鎵鋅薄膜電晶體的閘極介電層，製作於玻璃基板上，而電晶體結構是使用下閘極結構，其結構是由氧化銦鎵鋅作為主動層材料、二氧化矽作為閘極界電層，氧化銦錫作為電極材料，分別以磁控濺鍍系統依序成長其薄膜。因非晶型態的氧化銦鎵鋅電晶體有著本質上的缺陷，所以本論文主要研究被覆層對非晶型態的氧化銦鎵鋅電晶體在大氣中的水和氧所存在的穩定性分析與元件操作在長時間下的耐久性分析等方向進行探討。首先使用不同厚度的被覆層觀察其特性變化，然後在探討退火後對其特性之變化。

關鍵字

銦鎵氧化鋅 ； 氧化鋅 ； 被覆層 ； 電晶體 ； 二氧化矽

並列摘要

Amorphous oxide semiconductors and wide-band-gap transparent are promising functional components for next-generation devices.
This dissertation describes the fabrication and characterization of optoelectronic devices (transistors) with a-InGaZnO. In this study, fabricating SiO2 gate insulator for a-InGaZnO thin-film transistors on glass, we fabricate bottom-gate structure using a-InGaZnO film as an active channel layer and SiO2 as gate insulator ans ITO as the gate, source, and drain electrode grown by using rf-sputtering. However, a-IGZO transistors have some inherent defect, in this study, research a-InGaZnO thin-film transistors with passivation layers as sensitive to water and oxygen thereby affect the device stability and time dependence threshold voltage variation in ambient of passivation layer and reliability are investigated. First use the different thickness of the passivation layer to observe the characteristic changes, and then investigate the annealing characteristics of change.

並列關鍵字

InGaZnO ； ZnO ； passivation ； transistor ； SiO2.

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