本研究中使用了多孔陽極氧化鋁模板並將其應用在磁性薄膜上的奈米結構生長,透過改變陽極處理電壓等製程,使得其幾何形狀能夠取得較佳的控制情形。本論文所製備之AAO模板是使用一種名為二次陽極處理的製程,使用0.3M的草酸溶液作為電解液,陽極處理電壓為20-60V,工作溫度為10℃。奈米孔洞的磁性薄膜或鎳鐵反點陣列的製備是利用濺鍍Ni80Fe20 至AAO 模板上。樣品上的磁性薄膜孔徑變化從 26至90 nm。為了比較磁滯曲線的變化並製備了在Al基板上的Ni80Fe20薄膜。量測顯示,反點陣列的矯頑力不僅大於無圖案化的薄膜,而且改變了薄膜完整性和孔徑的改變。實驗前使用OOMMF模擬系統,去觀察不同孔徑下的磁性行為,模擬各種參數後再與實驗數據做比較。結果發現到,隨著孔徑的增加,矯頑力的值也就會隨著提升。推測為缺陷的大小會阻礙磁矩的運動所造成的。
In this paper, porous alumina template and nanostructures were used as the defects of the magnetic thin film. By tuning the anodize processes, that is changing the anodize voltage, time of the electrolyte process, time of reaming process, it is possible to control its geometry. Samples were obtained by two-step anodize processes. We used 0.3M oxalic acid solution as electrolyte, an anodize voltage of 20-60 V, and a temperature of 10℃. Films with antidot array have been prepared by the sputtering of Ni80Fe20 onto anodic alumina membrane templates. The pores diameter varies from 26 to 90 nm. A counterpart continuous thin film grown on Al substrate was also prepared. The coercivities of the antidot arrays are not only greater than those of un-patterned films, but it change by the films integrity and the pore diameter. In experiments using oommf simulation software in a different pore diameter observed in the magnetic behavior and then compared with our experiments data. The results show that the pore diameter become higher, the coercivity is increase. It is presumed that the parameters of the size and type of defects hinder the movement of the magnetic moment.