氮化鎵與矽功率電晶體應用於升壓電路之特性分析

Characterization of GaN and Power MOSFETs in Boost Converter

劉珍妤(Chen-Yu Liu)

指導教授 ： 成維華 ； 鄭時龍

國立交通大學/工學院/機械工程系所/碩士(2017年)

摘要

在現今電力應用發達的時代，電力電子相關產品已與生活密不可分，無論是常見的交流電源，或是太陽能基板產生的直流電源。本文為直流電壓轉換器之設計，輸入電壓為96伏特，輸出瓦數為400瓦，並應用矽功率電晶體以及氮化鎵開關進行測試與分析。氮化鎵開關具有良好的材料特性，如高電子遷移率、高電流密度、低導通電阻以及有較高的崩潰電壓，能夠有效地降低開關切換造成的損耗。本文藉由應用兩種開關於直流升壓電路模組，藉由其效率的轉換來分析兩種開關的材料特性及應用上的優劣。

關鍵字

氮化鎵 ； 矽功率電晶體 ； 升壓電路

並列摘要

Nowadays, in the generation of electricity used widely, the applications of power-electricity, not only the AC power supply, but also the DC one which is produced by the solar system, are inseparable with our daily life. The thesis studies the DC/DC converter that has 96V of the input voltage, and 400W of the output power, which is in application to the Si-MOS and the GaN. The GaN is the material that has great characteristic, for instance, high mobility, high current density, low on-resistance and higher breakdown voltage, so that it can decrease the loss of the switch effectively. The research compares the two different FET used on DC/DC converter, and analyzes the advantage and disadvantage of two different materials by the efficiency of the modules.

並列關鍵字

GaN ； Power MOS ； Boost converter

參考文獻

[1]、 Y. C. Ren, M. Xu & J. H. Zhou, “Analytical loss model of power MOSFET,” IEEE Transactions on Power Electronics, pp. 310-319, 2006.

[2]、 J. Das, J. Everts & J. Van Den Keybus, “A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si,” IEEE Electron Devices Society, pp 1370-1372, 2011.

[3]、 M. J. Scott, K. Zou & J. Wang, “A Gallium-Nitride Switched-Capacitor Circuit Using Synchronous Rectification,” IEEE Transactions on Industry Applications, pp1383-1391, 2013.

[4]、 B. Wang, M. Riva, J. D. Bakos & A. Monti, “Integrated Circuit Implementation for a GaN HFET Driver Circuit,” IEEE Transactions on Industry Applications, pp2056-2067, 2010.

[5]、 Y. F. Wu, M. J. Mitos, M. L. Moore & S. Heikman, “A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz,” IEEE Electron Devices Society, pp. 824-826, 2008.