We try to fabricate amorphous diluted magnetic semiconductors by doping Mn, Cr into amorphous InGaZnO4 transparent conducting oxide, and study the physical properties of Mn, Cr-doped amorphous InGaZnO4 thin films. The thin films were fabricated on sapphire substrates by pulsed laser deposition. All thin films are amorphous with no secondary phase induced by Mn, Cr dopings. Apparent magnetic hysteresis effects at room temperature are observed. The hysteresis effect is significantly influenced by substrate temperature during deposition and doping concentration. The magnetic behaviors can be explained by bound magnetic polaron model. The films display carrier mobility larger than 20cm2V-1S-1 and have over 80% of transparency in the visible light region. The transparency near absorption edge is reduced, but the band gap is not influence by doped Mn, Cr.