運用遠程氮電漿處理之無摻雜氧化鉿負電容鐵電電晶體之探討

Investigation of Dopant-Free HfO2 Ferroelectric Negative Capacitance Transistor with Remote Nitrogen Plasma Treatment

黃仲瑩(Zhong-Ying Huang)

指導教授 ： 周武清 ； 鄭淳護

國立交通大學/理學院/電子物理系所/碩士(2019年)

摘要

無資料

關鍵字

氧化鉿 ； 負電容效應

並列摘要

無資料

並列關鍵字

HfO2 ； negative capacitance effect

參考文獻

[1] K. S. Yeo et al, 2014 International Symposium on Integrated Circuits (ISIC), pp. 568 - 571, 2014.

[2] Masaharu Kobayashi 2018 Appl. Phys. Express 11 110101

[3] Daniel J. R. Appleby, et al., “Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature,” Nano Lett., volume 14, issue 7, pp. 3864-3868, 2014.

[4] Sayeef Salahuddin and Supriyo Datta, “Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?,” in IEDM Tech. Dig., pp.693-696, 2008.

[5] J. Müller, P. Polakowski, et al.,” Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects,” ECS J. Solid State Sci. Technol., volume 4, issue 5, pp. N30-N35, 2015.