以化學氣相沉積技術生長晶圓尺寸單原子層單晶六方氮化硼薄膜於銅(111)/藍寶石基板上

Synthesizing Wafer-scale Single-crystal Monolayer Hexagonal Boron Nitride Thin Film on Cu(111)/Sapphire Substrates by Chemical Vapor Deposition

温詔凱(Caho-Kai Wen)

指導教授 ： 張文豪

國立交通大學/理學院/電子物理系所/碩士(2020年)

摘要

近年來，石墨烯、過度金屬二硫化物和六方氮化硼等二維材料的結構及特性已經引起很大的關注。最近有研究指出可以在熔融態的金表面生成單晶的六方氮化硼薄膜，但使用黃金的成本太高，不適合用在量產。也有研究指出可以在銅箔表面生成單層六方氮化硼薄膜，但銅箔不適合與以矽基板為主的電子科技業結合。
先前在銅上生長六方氮化硼的研究中，無法去除片狀六方氮化硼因為晶相不同的關係，而在合併成薄膜時產生晶界。然而，我們成功以化學氣相沉積 (chemical vapor deposition, CVD) 的方法生長單層單晶二維六方氮化硼 (single-crystal two-dimensional hexagonal boron nitride) 薄膜於2吋之銅/藍寶石基板 (copper/c-sapphire) 上。銅的成本不高，而且這樣的銅/藍寶石基板可以重複使用，又是在晶圓上，使它適合與現在的電子科技業結合。

關鍵字

六方氮化硼 ； 化學氣相沉積 ； 二維材料

並列摘要

In recent years, two-dimensional (2D) materials such as graphene, transition metal disulfide (TMD) and hexagonal boron nitride (hBN) had been widely discussed. A recent report has shown the growth of single-crystal hBN film on the surface of molten gold. But using gold is not favored for mass production due to high cost. Some other studies showed the growth of large-scale hBN films on bulk copper foils. However, using copper foils as substrate is not preferred in standard microelectronic fabrication process.
Previous studies in growing hBN flakes on copper have failed to achieve single orientation, which will result in grain boundaries when they merge into films. Despite that, we have successfully demonstrated the growth of single-crystal hBN monolayers on a 2-inch Cu (111) / c-sapphire substrate by chemical vapor deposition method. This Cu (111) / sapphire substrate is reusable and inexpensive. Furthermore, its on-wafer feature makes it suitable for microelectronic fabrication on Si wafers.

並列關鍵字

hexagonal boron nitride ； chemical vapor deposition ； two-dimensional material

參考文獻

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