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  • 學位論文

新穎硒化物TMxSn2-xBi4Se8(TM = Mn, x = 1~2; Fe, x =0.5~0.75)的合成與物性分析

Synthesis and Characterization of New SelenidesTMxSn2-xBi4Se8(TM = Mn, x = 1~2; Fe, x =0.5~0.75)

指導教授 : 李積琛

摘要


本論文成功以固態燒結法在823K 的溫度下,合成出兩系列皆具有礦物Grumiplucite 結構之新穎硒化合物系統MnxSn2-xBi4Se8 以及FexSn2-xBi4Se8。它們的晶系都屬於單斜體,空間群同為 C2/m。晶體結構由兩層NaCl(311)結構單元平行c 軸延伸但不同厚度的平板交替堆疊而成。 從導電度的測量得知,MnxSn2-xBi4Se8 ( x = 1, 1.5, 2 ) 及 FexSn2-xBi4Se8(x = 0.5, 0.75)的電阻率隨溫度上升而下降,屬於半導體行為。MnxSn2-xBi4Se8 (x = 1, 1.5, 2)的電阻率隨著Mn 的含量下降,導電度增加,FexSn2-xBi4Se8 (x = 0.5, 0.75)則是Fe 含量上升時導電性增加。從UV-VIS 漫反射式吸收光譜得知,半導體能距皆小於0.69eV。MnSnBi4Se8 及FexSn2-xBi4Se8 (x =0.5, 0.75)皆為n-type 的半導體,各個化合物室溫的Seebeck量測值約-100μV/K (FexSn2-xBi4Se8)與-200μV/K(MnSnBi4Se8)。在磁性性質方面,除Fe0.75Sn1.25Bi4Se8 在275K以下為鐵磁性外,其餘化合物皆為反鐵磁性且過渡金屬在高自旋( high spin ) 的狀態。電子結構計算顯示在電子自旋極化(spin-polarized)的模型計算下有較穩定的總能量。

並列摘要


New selenides TMxSn2-xBi4Se8 (TM = Mn, Fe) were prepared bydirectly reacting the elements in stoichiometric ratios at 823K.These compounds crystallized in the monoclinic system with space group C2/m(No.12). All phases are isostructural to the Grumiplucite type that features three-dimensional framework with building units of rod type units running parallel to the c-axis. The resistivity decrease with increasing temperature for all compounds, indicative of semiconducting behaviors. The resistivity of Mn-phases decreases with decreasing contents of Mn but the resistivity of Fe-phases exhibit the reverse trend. Diffuse-reflectance spectra show that the band gaps of all phases are lower than 0.69 eV. According to the Seebeck coefficient measurements, MnSnBi4Se8 and FexSn2-xBi4Se8(x = 0.5, 0.75)phases are n-type semiconductors. Temperature dependence susceptibilities measurements indicate paramagnetic property for MnxSn2-xBi4Se8(x = 1, 1.5, 2)and Fe0.5Sn1.5Bi4Se8, but Fe0.75Sn1.25Bi4Se8 exhibits ferromagnetic property below 275K. Band structure calculations using LMTO method show that the calculations with spin-polarized models are more stable than those with the nonmagnetic models.

參考文獻


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(9) Thermoelectricity: Science and Engineering, I., New York, 1961.

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