在無摻雜之砷化鎵銦/砷化鋁鎵量子井上 橫向P-N接面的製備與特徵

Fabrication and Characterization of Lateral P-N Junction on Undoped InGaAs/AlGaAs Quantum Well

沈書文(Shu-Wen Shen)

指導教授 ： 林聖迪

國立交通大學/電機學院/電子工程系所/碩士(2014年)

https://doi.org/10.6842/NCTU.2014.00879

摘要

在本論文中，我們提出了製作高品質橫向P-N接面的方法，該方法是在無摻雜質的砷化鋁鎵(AlGaAs)-砷化鎵銦(InGaAs)- 砷化鋁鎵(AlGaAs)量子井磊晶結構上，製作了一個類似場效電晶體的結構，利用於量子井上方的架橋式閘極和表面閘極來引致出二維電子氣(2DEG)與二維電洞氣(2DHG)，N型與P型的表面閘極比鄰放置，於是在其下方引致的2DEG和2DHG相鄰而形成二維的P-N接面。其中架橋式閘極與表面閘極和源極以絕緣層隔開，如此的設計可以獨立控制歐姆接觸端與Hall bar中的載子濃度，並減少散射機制以維持二維通道之品質。在論文中，詳述了製程的方法和參數，並且探討元件電性的基本特徵，並利用霍爾量測的方式來估算關於二維通道中P型載子的資訊。由於我們所提出的這種同平面結構可維持二維的通道品質，因此非常具有成為單光子源的潛力。

關鍵字

橫向PN接面 ； 引致二維電子氣

並列摘要

In the thesis, we proposed a technique to fabricate high quality P-N junction.
Two dimensional electron gases (2DEGs) and two dimensional hole gases (2DHGs) are formed on the undoped AlGaAs/InGaAs/AlGaAs quantum well with a structure which is similar to a field effect transistor. The use of insulated gates allows independent control over the carrier density in the Hall bar and ohmic contact regions of the device. The n-type and p-type gate are separated by intrinsic region , and therefore the induced 2DEGs and 2DHGs underneath form a two dimensional lateral P-N diode. In the thesis, I stated the fabrication parameter and the method of measurement, and discussed the basic characterization of lateral P-N diode. In the end, we got the carrier density in p type channel by Hall measurement, and evaluated the hole mobility with the observation of integer quantum Hall effect. The proposed structure can maintain the quality of two dimension channel by minimize the scattering matters. When integrated with the charge pumping mechanism , it has the power to be a single photon source.

並列關鍵字

Lateral pn junction ； induce 2DEG

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