準分子雷射結晶及反向摻雜應用於低溫p型多晶鍺薄膜電晶體之研究

Study on the Characteristics of Low-Temperature p-Channel Polycrystalline-Germanium Thin-Film Transistors with the Excimer Laser Crystallization and Counter Doping

黃敬餘(Ching-Yu Huang)

指導教授 ： 鄭晃忠

國立交通大學/電機學院/電子工程系所/碩士(2015年)

https://doi.org/10.6842/NCTU.2015.00621

摘要

無資料

關鍵字

鍺 ； 薄膜電晶體 ； 準分子雷射結晶 ； 反向摻雜

並列摘要

無資料

並列關鍵字

Germanium ； Thin-Film Transistors ； Excimer Laser Crystallization ； Counter Doping

參考文獻

[1-1] K. C. Saraswat, “3-D ics: Motivation, performance analysis, technology and applications.” Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1–6, 2010.

[1-3] T. Sameshima, H. Watakabe, H. Kanno, T. Sadoh, and M. Miyao, “Pulsed laser crystallization of silicon–germanium films.” Thin Solid Films., vol. 487, pp. 67-71, 2005.

[1-4] C. C. Cheng, and C. H. Chien, “Junction and Device Characteristics of Gate-Last Ge p-and n-MOSFETs with ALD-Gate Dielectric.” IEEE TRANS ELECTRON DEVICES, vol. 56, pp. 1681-1689, 2009.

[1-5] D. Kuzum, T. Krishnamohan, A. Nainani, Y. Sun, P. A. Pianetta, and H. -S. Philip Wong, “High-mobility Ge N-MOSFETs and mobility degradation mechanisms.” IEEE TRANS ELECTRON DEVICES, vol. 58, pp. 59-66, 2011.

[1-6] D. Kuzum, J. H. Park, T. Krishnamohan, and H. -S. Philip Wong, “The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics.” IEEE TRANS ELECTRON DEVICES, vol. 58, pp. 1015-1022, 2011.