表面電漿子增強氮化銦鎵/氮化鎵多重量子井結構之自發性復合速率探討

Surface Plasmon Enhanced Spontaneous Recombination Rate in InGaN/GaN Multiquantum-well Structures

林千又(Chian-you Lin)

指導教授 ： 徐子民

國立中央大學/理學院/物理學系/碩士(2007年)

摘要

在本論文中，我們探討表面電漿子增強氮化銦鎵/氮化鎵多重量子井之自發性復合速率，在實驗方面，我們在氮化銦鎵/氮化鎵多重量子井表面鍍上金屬薄膜使量子井能量和金屬表面電漿子能量耦合，並利用時間鑑別螢光光譜系統來量測各個能量螢光生命週期以便看自發性復合速率的改變，我們發現在表面電漿子共振能量處鍍金屬與未鍍金屬的生命期比值為最大，接下來，我們利用三層介質的色散關係所求得的表面電漿子共振頻率來證實我們的實驗，經過實驗值與理論值之整理與比較，我們可以確定表面電漿子共振存在於本實驗，並成功的將自發性復合速率增快了二倍多。

關鍵字

量子井 ； 表面電漿子

並列摘要

In this thesis, we confer on surface plasmon enhanced spontaneous recombination rate in InGaN/GaN multiquantum-well structures. In our experiment, the emission energy of InGaN/GaN multiple quantum wells couple to the electron vibration energy of surface plasmon at the metal-semiconductor surface by depositing metallic thin film on InGaN/GaN multiple quantum wells. To see the modified spontaneous emission rate, the photoluminescence (PL) spontaneous emission rate at different energies was measured by time-resolved PL spectrum experimental setup. We find that the ratio of PL lifetime of the uncoated sample to that of the coated one becomes larger at metal surface plasmon energy. Also, the dispersion relation of three-layer dielectric media is used to calculate the surface plasmon resonance energy to establish our experiment. By comparing the experimental and theoretical results, the occurrence of surface plasmon in our experiment was confirmed. The enhancement of spontaneous emission rate was observed by more than two times.

並列關鍵字

quantum well ； surface plasmon

參考文獻

[1] H. Raether, Surface Plasmons (Springer, New York,1988)

[3] R. W. Wood, Philos. Mag. 4, 396, 1902.

[4] U. Fano, J. Opt. Soc. Am. 31, 213, 1941.

[5] A. Hessel, and A. A. Oliner, Appl. Opt., 4, 1275, 1965.

[6] C. Haynes, and R. P. Van Duyne, J. Phys. Chem. B 107, 7426, 2003.