使用反應濺鍍法於塑膠基板上製鍍抗反射膜之研究

The Study of Antireflection Coating on Plastic Substrates by Reactive Sputtering

林志雄(Chih-hsiung Lin)

指導教授 ： 李正中

國立中央大學/理學院/光電科學研究所碩士在職專班/碩士(2007年)

摘要

本文使用電漿監控系統及雙靶極(Dual Cathode)技術，進行穩定的氧化物薄膜濺鍍製程，並將此製程使用於Roll to Roll 塑膠膜濺鍍設備上，控制精確的氧氣含量可得到穩定且高品質的氧化物薄膜。由控制靶極功率、氧氣流量及捲動速度可連續製鍍出多層膜光學膜。
實驗結果顯示，使用雙靶極(Dual Cathode)技術製鍍出的SiO2它的折射率(n)在波長550nm時為1.475081而消光係數(k)為0，為相當好的濺鍍膜質，使用此系統可使濺鍍製程中保持較高的鍍率而靶材表面不至於被毒化。製鍍出的ITO導電光學膜其折射率(n)在波長550nm時為1.992696，消光係數(k)為0.018572。
本實驗使用SiO2及ITO材料交互堆疊濺鍍出多種光學膜，ITO/SiO2/ITO/PET的設計可得到反射率小於2%，穿透率大於92%，面阻抗值為500Ω/□　之具抗反射功能的ITO導電膜。若加入薄金屬層Ag材料的設計，使用ITO/Ag/ITO/SiO2/PET的設計可得到反射率小於2%，穿透率可達85%，面阻抗3.2Ω/□　之超低面阻值、高穿透率的ITO導電膜。使用SiO2/ITO/SiO2/ITO/PET的四層抗反射膜設計，可得到反射率小於0.6%，穿透率大於93%，面電值阻抗為3 X 107(Ω/□)之具有抗靜電功能的抗反射膜。而濺鍍抗反射膜於HC/TAC的塑膠材料上，使用SiO2/ITO/SiO2/ITO/HC/TAC四層抗反射膜設計，可得到反射率0.4%，穿透率大於94%，面電值阻抗為3 X 107(Ω/□)之具有抗靜電功能的抗反射膜。

關鍵字

反應濺鍍法 ； 抗反射膜

並列摘要

The thesis uses plasma emission monitor system and dual cathode technology to conduct the process of oxide thin film sputtering process, and uses this process in the Roll to Roll plastic film sputter equipment, to control the exact amount of oxygen, and to get steady and high-quality oxide thin film. Through the control of the cathode power, oxygen flow, and roller run speed, continuous process of sputtering multi-layer optics film can be done.

The result shows that the SiO2 of refractive index—when sputtering by the dual cathode technology—is 1.475081 in the wavelength of 550nm. It has an excellent quality to the sputtering process. During the sputtering process, the system can maintain the highest sputtering rate and prevent the target from being poisoned. The product of sputtering, ITO electricity-conducting optics film, has a refractive index of 1.992696 in the wavelength of 550nm and extinction coefficient is 0.018572.

The experiment uses SiO2 and ITO to stack and sputter various kinds of optics films. The design of ITO/SiO2/ITO/PET can get an antireflection of ITO electricity-conducting film whose reflectance is less than 2%, transmittance is more than 92%, and sheet resistance is 500Ω/□. Combined with the material -thin metal Ag, the ITO/Ag/ITO/SiO2/PET design can get an ITO electricity- conducting film with a reflectance less than 2%, transmittance more than 85%, and sheet resistance is 3.2Ω/□. The four layer anti-reflection film SiO2/ITO/SiO2/ITO/PET design can get an antireflection and antistatic functions, and its reflectance is less than 0.6%, transmittance more than 93%, and sheet resistance is 3 X 107(Ω/□).

Sputtering antireflection film uses the plastic material HC/TAC. The four layer antireflection film SiO2/ITO/SiO2/ITO/HC/TAC design can get an antireflection and antistatic film with reflectance of 0.4%, transmittance of more than 94%, and sheet resistance is 3 X 107(Ω/□).

並列關鍵字

anti-reflection film ； reactive sputter method ； dual cathode

參考文獻

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