多晶矽和金屬閘極於二維金氧半場效電晶體模擬比較

Comparison Between Polysilicon and Metal Gate in 2D MOSFET Simulation

梁瀅龍(Ying-Lung Liang)

指導教授 ： 蔡曜聰

國立中央大學/資訊電機學院/電機工程學系/碩士(2015年)

摘要

本篇論文中，我們將帕松方程式及電流連續方程式，利用等效電路的方式來設計出二維網格數值元件模擬器，元件的模擬就變成了電路的模擬，不但可以用電路模擬器來做元件模擬，而且可以和一般電路結合，形成混階模擬，接著討論多晶矽閘極和金屬閘極的差異和優缺點，並利用多晶矽閘極模擬的結果和金屬閘極來做比較，最後，我們將討論的主題是用非白努力的電流表示方法，並比較非白努力方程式與傳統白努力方程式上的差異。

關鍵字

矩形網格 ； 元件模擬 ； 金氧半場效電晶體

並列摘要

In this thesis, we use Poisson’s equation and continuity equations to design an equivalent circuit model for 2-D device simulation. The device simulation will be transformed into the circuit simulation. The simulation will become a mixed-level device and circuit simulation. We discuss the advantages and disadvantages between poly-Si gate and metal gate. And the simulation results of poly-Si gate will be compared with those of metal gate. Finally, the subject to be discussed is the non-Bernoulli equation for current expression. We will compare the Bernoulli method with non-Bernoulli method.

並列關鍵字

rectangular mesh ； device simulation ； MOSFET

參考文獻

[1] M. A. Mahmud and S. Subrina, “A Two Dimensional Analytical Model of Drain to Source Current and Subthreshold Slope of a Triple Material Double Gate MOSFET,” IEEE ICECE Proc., Dec. 2014.

[2] G. M. Zhang, Y. K. Su, H. Y. Hsin, and Y. T. Tsai, “Double gate junctionless MOSFET simulation and comparison with analytical model,” IEEE RSM Proc., Sep. 2013.

[3] R. A. Jabr, M. Hamad, Y. M. Mohanna, “Newton-Raphson solution of Poisson's equation in a pn diode,” International Journal of Electrical Engineering Education, Vol. 44 Issue 1, p23, Jan. 2007.

[4] M. J. Zeng, ”Development of Triangular element and its applications to arbitrary 2D Semiconductor device,” M. S. Thesis, Institute of EE, National Central University, Taiwan, R.O.C, 2014.

[8] C. C. Chang, S. J. Li, and Y. T. Tsai, “Two-dimensional Mixed-level Device and Circuit Simulation using a simple Band Matrix Solver,” in EDMS 2005, Kaohsiung, Taiwan, 2005.