三維撞擊游離模型之開發與其在球PN接面崩潰模擬之應用

Development of 3D impact-ionization model and its applications to breakdown simulation of spherical PN junction.

白佳宏(Chia-hung Pai)

指導教授 ： 蔡曜聰

國立中央大學/資訊電機學院/電機工程研究所碩士在職專班/碩士(2011年)

摘要

本篇論文中，我們藉由加入離子衝撞游離模型於三維元件模擬器內，來模擬半導體元件內部載子雪崩崩潰之現象。首先我們利用Poisson’s equation 和電子與電洞的連續性方程式，模擬三維半導體元件的載子產生與復合特性。接著我們再討論整體三維模擬器的程式流程還有帶寬(BW)的原理。再者為了實現三維模擬器讓時間更有效率，敘述如何選擇整體參數設定，緊接著討論三維在二維上的驗證。最後再顯示出三維模擬器的崩潰結果。確定無誤後，接著我們繼續探討不同擴散半徑對於崩潰電壓的影響。

關鍵字

三維元件模擬器 ； 帶寬的原理 ； 雪崩崩潰

並列摘要

In this thesis, we design a 3-D device simulator which includes the impact-ionization model to simulate the breakdown phenomenon of avalanche. First, we use Poisson’s equation, electron continuity equation and hole continuity equation to simulate 3-D device recombination rate and generation rate, and then we discuss the theorems, which include 3-D device simulator program flow chart and Band-Width property. In order to optimize efficiency in 3-D device simulation, we describe how to choose simulation parameters. After that, we discuss to prove 3-D device on 2-D stage. Finally, show the breakdown result of 3-D device simulator. After confirmation, we discuss the breakdown voltage effect on different diffusion radii.

並列關鍵字

Band-Width property ； breakdown phenomenon ； 3-D device simulator

參考文獻

[1] P. C. H. Chan and C. T. Sah, “Exact Equivalent Circuit Model for Steady-state

Characterization of Semiconductor Devices with Multiple-Energy-Level Recombination Centers,” IEEE Transactions Electron Devices, vol. ED-26, no. 6, pp.

924-936, 1979.

[2] C. C. Chang, C. H. Huang, J. F. Dai, S. J. Li, and Y. T. Tsai, “3-D numerical device simulation including equivalent-circuit model,” IEDMS, 2002.

[3] M. Shur, “Introduction to Electronic Devices,” Chapter 3, John Wiley & Sons