利用電子迴旋共振化學氣相沉積法成長氫化非晶矽薄膜與p-i-n薄膜太陽能電池

Deposition Hydrogenated Amorphous Silicon Thin Film and p-i-n Solar Cell by Electron Cyclotron Resonance Chemical Vapor Deposition

朱彥和(Yen-ho Chu)

指導教授 ： 張正陽

國立中央大學/理學院/光電科學研究所/碩士(2011年)

摘要

本篇論文是以電子迴旋共振化學氣相沉積法(ECR-CVD)來探討薄膜特性與初步p-i-n太陽能電池的特性，ECR-CVD屬高密度電漿，主要是當磁場內的電子迴轉角頻率和入射微波頻率相同時產生共振吸收達到最大能量轉換。相較於傳統PECVD，ECR-CVD有以下幾項優點，如優異的沉積速率、無電極汙染、較高氣體使用率、低離子轟擊能等等。此實驗中我們將調變氫氣稀釋比例、微波功率、製程壓力、氣體總流量、氬氣總流量等參數來探討其對薄膜品質的影響，將會利用傅氏轉換紅外線光譜儀、紫外可見光光譜儀等儀器量測薄膜特性，也利用AM1.5太陽光模擬器、Keithley量測太陽電池的電性。實驗結果發現(1)在晶相過渡區前有較優異的薄膜品質特性，(2)微波功率和總氣體流量是影響沉積速率的主要因素，(3)製程壓力為其於薄膜特性的影響主因，因此製程壓力相當重要。我們在本質層實驗中挑選一組光暗電導比值最大的參數做為薄膜電池中的本質層，目前初步薄膜太陽電池效率(η)=1.03 %、開路電壓(VOC)=0.56 V、短路電流密度(JSC)=4.30 A/cm2 、填充因子(FF) =42.6%。

關鍵字

氫化非晶矽薄膜 ； 電子迴旋共振化學氣相沉積法

並列摘要

This paper is based on electron cyclotron resonance chemical vapor deposition (ECR-CVD) to research the characteristics of a-Si:H and initial pin thin-film solar cell. ECR-CVD is a high-density plasma that the plasma generated in the ECR process is via resonant absorption of a microwave by electrons in a magnetic field and gas ionization via subsequent electron-atom collisions. Compared with conventional PECVD, ECR-CVD has several advantages, such as the excellent deposition rates, no electrode contamination, high gas utilization, low energy ion bombardment, and so on. This experiment we explored the film quality by modulation of hydrogen dilution ratio, microwave power, process pressure, total flow rate, Ar flow rate. Measured thin-film and solar cell properties by using Fourier transform infrared spectroscopy, UV-Vis spectrometer, AM1.5 sunlight simulator, Keithley 2400 etc.. Experimental results showed that (1) crystalline phase transition zone in front of the more outstanding film-quality features, (2) microwave power and total flow rate is the main factor affecting the deposition rate, (3) parameter of working pressure is quite important for thin-film quality. Finally, we selected a highest photo response value from intrinsic layer to growth solar cell, the efficiency (η) = 1.03%, open-circuit voltage (VOC) = 0.56 V, short-circuit current density (JSC) = 4.30 A/cm2, fill factor (FF) = 42.6%.

並列關鍵字

ECR CVD ； a-Si:H

參考文獻

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