以熱燈絲化學氣相沉積法製作寬能隙p型奈米晶碳化矽薄膜於矽異質接面太陽能電池之應用

Fabrication and Characterization of P-type Nanocrystalline SiC Films Using Hot-wire Chemical Vapor Deposition for Heterojunction Solar Cell Applications

謝昕佑(Hsin-Yu Hsieh) ； 武東星(Dong-Sing Wuua) ； 毛信元(Hsin-Yuan Mao) ； 吳秉叡(Bing-Rui Wua)

《真空科技》 24卷3期 (2011/09) Pp. 27-32

https://doi.org/10.29808/JVSROC.201109.0005

摘要

本研究乃利用熱燈絲化學氣相沉積法成長元件級之寬能隙p型奈米晶碳化矽薄膜，並應用於p型碳化矽／n型單晶矽結構異質接面太陽電池之製備。所有以熱燈絲化學氣相沉積法製作之p型奈米晶碳化矽之薄膜都經過X光繞射分析儀、拉曼光譜儀、N&K和霍爾效應等微結構或光電特性分析，藉由薄膜性質分析可發現，以熱燈絲化學氣相沉積法製作p型奈米晶碳化矽薄膜時，參與反應的氫氣流量是薄膜成長的一個很重要之因素，隨著氫流量的增加，光學能隙隨之上升，而活化能會隨之下降。此外，本研究同時也探討了非晶矽薄膜緩衝層，在不同的氫處理製程條件下對元件特性之影響。最後，我們成功地製作出轉換效率為14.09％的p型碳化矽／n型單晶矽異質接面太陽電池，該元件之開路電壓為0.59V、短路電流密度為38.06mA／cm^2以及填充因子為62.03％。

關鍵字

熱燈絲化學氣相沉積法 ； 寬能隙 ； 碳化矽 ； 氫處理 ； 矽異質接面太陽能電池

並列摘要

Wide optical bandgap p-type nanocrystalline silicon carbide films deposited byhot-wire chemical vapor deposition were used as window layers in n-type crystalline Silicon heterojunction solar cells. The effect of H2 flow rates on the material properties of p-nc-SiC films was investigated by X-ray diffractometer, Raman spectroscopy, N&K analyzer and Hall measurement. It was found that H2 flow rates played an important role in forming of p-nc-SiC films and increasing the optical bandgap and decreasing the Ea of p-nc-SiC films. Moreover, the effect of hydrogenation process of the amorphous Si buffer layer on solar cell characteristics was investigated. Under the optimum of deposition and hydrogenation parameters, the Silicon heterojunction solar cells with the opencircuit voltage of 0.59 V, short-circuit current density of 38.06mA/cm^2, fill factor of 62.03%, and the conversion efficiency of 14.09% were achieved.

並列關鍵字

Nanocrystalline ； Silicon Carbide ； Hydrogenation ； Heterojunction Solar Cell