- 學位論文
可重置毫米波CMOS MEMS前端電路之設計
Design of CMOS MEMS Reconfigurable Frontend Circuits
摘要
本論文分別以TSMC 0.35-μm及TSMC 0.18-μm CMOS微機電製程製作可重置微機電濾波器、可調頻帶槽孔天線和反射式相移器。與傳統微機電製程相較，使用CMOS微機電製程製作電路易於與CMOS射頻晶片電路整合，因此本論文專注於以CMOS微機電製程製作相關微波電路，為可達到可重置之目的，我們提出一種新型的靜電驅動式致動器魚骨(fishbone)架構，具有dual-state/multi-state重置的功能，有了這個結構，所需的驅動電壓可因此減少，致動器的尺寸亦變得更小。 第一個電路為可切換頻帶之微機電帶拒濾波器，使用接地指叉式結構，藉由機械結構的空間位移，改變與開路殘段之間隙，即影響其對地電容量，進而改變帶拒濾波器之中心頻率，實際量測可切換51 GHz、55 GHz、60 GHz、61 GHz、63.6 GHz共五個頻帶。 第二個電路設計可切換頻帶之CMOS MEMS槽孔天線，在槽孔中心置入CMOS-MEMS可變電容，機械結構為靜電式魚骨架構，設計電極使魚骨架構可進可退，兩個魚骨架構共可排列出七個不同的間隙(gap)，產生七個不一樣的電容值，利用電容值變化量改變其共振頻率，達到可切換頻帶之目的。在量測結果顯示其天線之頻率可由46.6 GHz切換至56 GHz共七個頻帶可切換，突破過去靜電式架構切換狀態過少的缺點，達到多頻帶切換的效果。 第三個電路為可切換式電容設計之CMOS MEMS反射式相移器，利用接地之指叉式機械結構，改變電容量，進而改變其所產生之相位變化，達到以多切換機制制動器設計之可切換相位之目的，在模擬結果顯示在60GH頻率下，相位切換範圍有163°。晶片尺寸為0.795 x 1.3205 mm2
並列摘要
In this thesis, a reconfigurable bandstop filter, a reconfigurable slot antenna and reflective-Type phase shifter using the standard CMOS technology are analyzed, designed and fabricated. To fully integrate with the readily developed CMOS transceiver into a single chip, CMOS-MEMS devices are more compatible than the traditional MEMS devices. For that reason, there is an urgent need to study and design the CMOS MEMS circuits, which motivates this work. The first design is a reconfigurable bandstop filter is also proposed in this work. By varying the gap between the open-stubs and grounded-interdigital structures, the center frequency alters simultaneously. The measurement results show that the center frequency can be tuned 51 GHz、55 GHz、60 GHz、61 GHz、63.6 GHz. The second design is reconfigurable slot antenna . The operation band is reconfigured by changing the capacitance based on comb fingers mechanical structure. The measurement results show that the center frequency can be tuned from 46.6 GHz to 56 GHz. The third circuit is a CMOS-MEMS switchable capacitor based reflective-type phase shifter is presented in this work. The phase is reconfigured by changing capacitance by using grounded interdigital mechanical structure to achieve reconfigurable phase shifter. Simulation result shows the phae range is 163° at 60GHz. This chip was fabricated using TSMC 0.18μm CMOS MEMS process with chip size of 0.795 x 1.3205 mm2.